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AO4616-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4616-VB

VBsemi Elec · MOSFETs · SO-8

AO4616-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30 V VDS, 8 A package-limited ID).
2 G1 input Gate of the N-channel MOSFET, with VGS rated at ±20 V.
3 S2 passive Source of the P-channel MOSFET (-30 V VDS, -8 A package-limited ID).
4 G2 input Gate of the P-channel MOSFET, with VGS rated at ±20 V.
5 D2 passive Drain of the P-channel MOSFET, tied to pins 6; VDS rated at -30 V.
6 D2 passive Drain of the P-channel MOSFET, tied to pin 5; VDS rated at -30 V.
7 D1 passive Drain of the N-channel MOSFET, tied to pin 8; VDS rated at 30 V.
8 D1 passive Drain of the N-channel MOSFET, tied to pin 7; VDS rated at 30 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 30 V 1
Drain-Source Voltage (P-Channel) VDS -30 V 1
Gate-Source Voltage (N-Channel and P-Channel) VGS -20 20 V 1
Continuous Drain Current (N-Channel) ID 8 A TC = 25 °C 1
Continuous Drain Current (P-Channel) ID -8 A TC = 25 °C 1
Continuous Drain Current (N-Channel) ID 6.8 A TC = 70 °C 1
Continuous Drain Current (P-Channel) ID -6.8 A TC = 70 °C 1
Continuous Drain Current (P-Channel) ID -6.6 A TA = 25 °C (notes b, c) 1
Continuous Drain Current (N-Channel) ID 5.4 A TA = 70 °C (notes b, c) 1
Continuous Drain Current (P-Channel) ID -5.3 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current (N-Channel) IDM 40 A 10 µs pulse width 1
Pulsed Drain Current (P-Channel) IDM -40 A 10 µs pulse width 1
Source-Drain Current Diode Current (N-Channel) IS 2.6 A TC = 25 °C 1
Source-Drain Current Diode Current (P-Channel) IS -2.6 A TC = 25 °C 1
Source-Drain Current Diode Current (N-Channel) IS 1.6 A TA = 25 °C (notes b, c) 1
Source-Drain Current Diode Current (P-Channel) IS -1.6 A TA = 25 °C (notes b, c) 1
Pulsed Source-Drain Current (N-Channel) ISM 40 A 1
Pulsed Source-Drain Current (P-Channel) ISM -40 A 1
Single Pulse Avalanche Current (N-Channel) IAS 10 A L = 0.1 mH 1
Single Pulse Avalanche Current (P-Channel) IAS -20 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 520 mJ 1
Maximum Power Dissipation (N-Channel) PD 3.1 W TC = 25 °C 1
Maximum Power Dissipation (P-Channel) PD 3.2 W TC = 25 °C 1
Maximum Power Dissipation (channel not printed) PD 22.1 W TC = 70 °C 1
Maximum Power Dissipation (N-Channel) PD 2 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation (P-Channel) PD 2 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation (N-Channel) PD 1.28 W TA = 70 °C (notes b, c) 1
Maximum Power Dissipation (P-Channel) PD 1.28 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient (N-Channel) RthJA 50 62.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient (P-Channel) RthJA 47 62.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Foot (Drain) (N-Channel) RthJF 30 40 °C/W Steady State 1
Maximum Junction-to-Foot (Drain) (P-Channel) RthJF 29 38 °C/W Steady State 1
Maximum Junction-to-Ambient steady state (N-Channel) RthJA 120 °C/W Steady state (note d) 1
Maximum Junction-to-Ambient steady state (P-Channel) RthJA 110 °C/W Steady state (note d) 1
Drain-Source Breakdown Voltage (N-Channel) VDS 30 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage (P-Channel) VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate Threshold Voltage (N-Channel) VGS(th) 1 2 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage (P-Channel) VGS(th) -2 -1 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage (N-Channel) IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Gate-Body Leakage (P-Channel) IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current (P-Channel) IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current (N-Channel) ID(on) 20 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current (P-Channel) ID(on) -20 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A 2
Drain-Source On-State Resistance (N-Channel) RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.04 Ω VGS = -10 V, ID = -8 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.044 Ω VGS = -8 V, ID = -6.5 A 2
Drain-Source On-State Resistance (P-Channel) RDS(on) 0.05 Ω VGS = -4.5 V, ID = -5 A 2
Gate Resistance (N-Channel) Rg 0.3 1 2.3 Ω f = 1 MHz 2
Gate Resistance (P-Channel) Rg 1.2 5.7 9.6 Ω f = 1 MHz 2
Turn-On Delay Time (N-Channel) td(on) 4 8 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-On Delay Time (P-Channel) td(on) 10 16 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Diode Forward Voltage (N-Channel) VSD 0.81 1.2 V IS = 5.4 A 3
Diode Forward Voltage (P-Channel) VSD -1.2 -0.77 V IS = -2 A 3

CAD (KiCad official)

  • Symbol: AO4616-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ao4616-vb-etched.step / ao4616-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4616-vb.step / ao4616-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 b0f2584cb8e96611, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF