component
AO4616-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| ao4616-hxy-etched.glb | 17d ago |
| ao4616-hxy-etched.step | 17d ago |
| ao4616-hxy-hero.glb | 17d ago |
| ao4616-hxy-hero.overlay.json | 17d ago |
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| README.md | 17d ago |
AO4616-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4616-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the channel 1 MOSFET in the dual N+P-channel device; the datasheet gives no pin-specific limit, and the channel ratings are VDS 30V and ID 7A (N-channel) with VGS ±20V. |
| 2 | G1 | input | Gate terminal of the channel 1 MOSFET; the datasheet gives VGS ±20V and a gate threshold of 1.0 to 2.5V for the N-channel, with operation down to 4.5V gate drive. |
| 3 | S2 | passive | Source terminal of the channel 2 MOSFET; the datasheet gives no pin-specific limit, and the P-channel ratings are VDS -30V and ID -8.5A with VGS ±20V. |
| 4 | G2 | input | Gate terminal of the channel 2 MOSFET; the datasheet gives VGS ±20V and a P-channel gate threshold of -1.0 to -2.5V. |
| 5 | D2 | passive | Drain terminal of the channel 2 MOSFET, rated for VDS -30V on the P-channel with continuous current of -8.5A at TA=25℃. |
| 6 | D2 | passive | Drain terminal of the channel 2 MOSFET (second drain pin tied to the same node), rated for VDS -30V on the P-channel with continuous current of -8.5A at TA=25℃. |
| 7 | D1 | passive | Drain terminal of the channel 1 MOSFET, rated for VDS 30V on the N-channel with continuous current of 7A at TA=25℃. |
| 8 | D1 | passive | Drain terminal of the channel 1 MOSFET (second drain pin tied to the same node), rated for VDS 30V on the N-channel with continuous current of 7A at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 30 | V | N-Ch column | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -30 | V | P-Ch column | 1 | ||
| Gate-Source Voltage (N-Ch) | VGS | -20 | 20 | V | N-Ch column, printed as ±20 | 1 | |
| Gate-Source Voltage (P-Ch) | VGS | -20 | 20 | V | P-Ch column, printed as ±20 | 1 | |
| Continuous Drain Current (N-Ch) | ID@TA=25℃ | 7 | A | VGS @ 10V, TA=25℃, note 1 | 1 | ||
| Continuous Drain Current (P-Ch) | ID@TA=25℃ | -8.5 | A | VGS @ 10V, TA=25℃, note 1 | 1 | ||
| Continuous Drain Current (N-Ch) | ID@TA=100℃ | 6 | A | VGS @ 10V, TA=100℃, note 1 | 1 | ||
| Continuous Drain Current (P-Ch) | ID@TA=100℃ | -4.6 | A | VGS @ 10V, TA=100℃, note 1 | 1 | ||
| Pulsed Drain Current (N-Ch) | IDM | 20 | A | note 2 | 1 | ||
| Pulsed Drain Current (P-Ch) | IDM | -28 | A | note 2 | 1 | ||
| Single Pulse Avalanche Energy (N-Ch) | EAS | 72 | mJ | note 3: VDD=25V, VGS=10V, L=0.1mH, IAS=10A | 1 | ||
| Single Pulse Avalanche Energy (P-Ch) | EAS | 62 | mJ | note 3 | 1 | ||
| Avalanche Current (N-Ch) | IAS | 21 | A | 1 | |||
| Avalanche Current (P-Ch) | IAS | -19 | A | 1 | |||
| Total Power Dissipation (N-Ch) | PD@TA=25℃ | 2.5 | W | TA=25℃, note 4 | 1 | ||
| Total Power Dissipation (P-Ch) | PD@TA=25℃ | 3.08 | W | TA=25℃, note 4 | 1 | ||
| Storage Temperature Range (N-Ch and P-Ch) | TSTG | -55 | 150 | ℃ | same value in N-Ch and P-Ch columns | 1 | |
| Operating Junction Temperature Range (N-Ch and P-Ch) | TJ | -55 | 150 | ℃ | same value in N-Ch and P-Ch columns | 1 | |
| Thermal Resistance Junction-Ambient | RθJA | 45 | ℃/W | note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 30 | ℃/W | note 1 | 1 | ||
| Drain-Source Breakdown Voltage (N-Ch) | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (N-Ch) | RDS(ON) | 18 | 25 | mΩ | VGS=10V, ID=6A | 2 | |
| Static Drain-Source On-Resistance (N-Ch) | RDS(ON) | 25 | 31 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1 | 1.5 | 2.5 | V | 2 | |
| Drain-Source Leakage Current (N-Ch, TJ=25℃) | IDSS | 1 | uA | VDS=30V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (N-Ch, TJ=55℃) | IDSS | 5 | uA | VDS=30V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current (N-Ch) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Single Pulse Avalanche Energy (N-Ch) | EAS | 16 | mJ | VDD=25V, L=0.1mH, IAS=10A | 2 | ||
| Continuous Source Current (N-Ch) | IS | 7 | A | note 1,6 | 2 | ||
| Pulsed Source Current (N-Ch) | ISM | 20 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage (N-Ch) | VSD | 1.2 | V | VGS=0V, IS=5A, TJ=25℃ | 2 | ||
| Drain-Source Breakdown Voltage (P-Ch) | V(BR)DSS | -30 | V | VGS=0V, ID=-250μA | 3 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | μA | VDS=-30V, VGS=0V | 3 | ||
| Gate to Body Leakage Current (P-Ch) | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID=-250μA | 3 |
| Static Drain-Source on-Resistance (P-Ch) | RDS(on) | 26 | 35 | mΩ | VGS=-10V, ID=-7A | 3 | |
| Static Drain-Source on-Resistance (P-Ch) | RDS(on) | 38 | 54 | mΩ | VGS=-4.5V, ID=-4A | 3 | |
| Maximum Continuous Drain to Source Diode Forward Current (P-Ch) | IS | -8.5 | A | 3 | |||
| Maximum Pulsed Drain to Source Diode Forward Current (P-Ch) | ISM | -28 | A | 3 | |||
| Drain to Source Diode Forward Voltage (P-Ch) | VSD | -0.8 | -1.2 | V | VGS=0V, IS=-7A | 3 |
CAD (KiCad official)
- Symbol:
AO4616-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4616-hxy-etched.step/ao4616-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4616-hxy.step/ao4616-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (9 pp, sha256
bcc0a1443cd5f841, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).