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AO4614B&30V-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4614B&30V-VB

VBsemi Elec · MOSFETs · SO-8

AO4614B&30V-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; drain-source rating is 30 V (N-channel) / -30 V (P-channel) and gate-source is ±20 V.
2 G1 input Gate of MOSFET 1; maximum gate-source voltage is ±20 V.
3 S2 passive Source of MOSFET 2; drain-source rating is 30 V (N-channel) / -30 V (P-channel) and gate-source is ±20 V.
4 G2 input Gate of MOSFET 2; maximum gate-source voltage is ±20 V.
5 D2 passive Drain of MOSFET 2 (tied internally with pin 6); pulsed drain current is 40 A (10 µs pulse).
6 D2 passive Drain of MOSFET 2 (tied internally with pin 5); pulsed drain current is 40 A (10 µs pulse).
7 D1 passive Drain of MOSFET 1 (tied internally with pin 8); pulsed drain current is 40 A (10 µs pulse).
8 D1 passive Drain of MOSFET 1 (tied internally with pin 7); pulsed drain current is 40 A (10 µs pulse).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage N-ch VDS 30 V N-Channel, TA=25 °C 1
Drain-Source Voltage P-ch VDS -30 V P-Channel, TA=25 °C 1
Gate-Source Voltage N-ch VGS -20 20 V N-Channel 1
Gate-Source Voltage P-ch VGS -20 20 V P-Channel 1
Continuous Drain Current N-ch ID 8 A N-Channel, TC=25 °C, TJ=150 °C, package limited 1
Continuous Drain Current P-ch ID -8 A P-Channel, TC=25 °C, TJ=150 °C, package limited 1
Continuous Drain Current N-ch ID 6.8 A N-Channel, TC=70 °C 1
Continuous Drain Current P-ch ID -6.8 A P-Channel, TC=70 °C 1
Continuous Drain Current P-ch ID -6.6 A P-Channel, TA=25 °C, t=10 s, 1"x1" FR4 1
Pulsed Drain Current N-ch IDM 40 A N-Channel, 10 µs pulse width 1
Pulsed Drain Current P-ch IDM -40 A P-Channel, 10 µs pulse width 1
Source-Drain Diode Current N-ch IS 2.6 A N-Channel, TC=25 °C 1
Source-Drain Diode Current P-ch IS -2.6 A P-Channel, TC=25 °C 1
Pulsed Source-Drain Current N-ch ISM 40 A N-Channel 1
Pulsed Source-Drain Current P-ch ISM -40 A P-Channel 1
Single Pulse Avalanche Current N-ch IAS 10 A N-Channel, L=0.1 mH 1
Maximum Power Dissipation N-ch PD 2 W N-Channel, TA=25 °C, t=10 s, 1"x1" FR4 1
Maximum Power Dissipation P-ch PD 2 W P-Channel, TA=25 °C, t=10 s, 1"x1" FR4 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance N-ch RthJA 50 62.5 °C/W N-Channel, t ≤ 10 s 1
Junction-to-Ambient Thermal Resistance P-ch RthJA 47 62.5 °C/W P-Channel, t ≤ 10 s 1
Junction-to-Foot Thermal Resistance N-ch RthJF 30 40 °C/W N-Channel, steady state 1
Junction-to-Foot Thermal Resistance P-ch RthJF 29 38 °C/W P-Channel, steady state 1
Drain-Source Breakdown Voltage N-ch VDS 30 V VGS = 0 V, ID = 250 µA, N-Ch 2
Drain-Source Breakdown Voltage P-ch VDS -30 V VGS = 0 V, ID = - 250 µA, P-Ch 2
Gate Threshold Voltage N-ch VGS(th) 1 2 V VDS = VGS, ID = 250 µA, N-Ch 2
Gate-Body Leakage N-ch IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V, N-Ch 2
Gate-Body Leakage P-ch IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V, P-Ch 2
Zero Gate Voltage Drain Current N-ch IDSS 1 µA VDS = 30 V, VGS = 0 V, N-Ch 2
Zero Gate Voltage Drain Current P-ch IDSS -1 µA VDS = - 30 V, VGS = 0 V, P-Ch 2
Zero Gate Voltage Drain Current N-ch IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Ch 2
Zero Gate Voltage Drain Current P-ch IDSS -10 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C, P-Ch 2
On-State Drain Current N-ch ID(on) 20 A VDS = 5 V, VGS = 10 V, N-Ch 2
On-State Drain Current P-ch ID(on) -20 A VDS = - 5 V, VGS = - 10 V, P-Ch 2
Gate Resistance N-ch Rg 0.3 1 2.3 Ω f = 1 MHz, N-Ch 2
Gate Resistance P-ch Rg 1.2 5.7 9.6 Ω f = 1 MHz, P-Ch 2
Total Gate Charge P-ch Qg 41.5 63 nC VDS = - 20 V, VGS = - 10 V, ID = - 10 A, P-Ch 2
Turn-On Delay Time P-ch td(on) 10 16 ns VDD = - 20 V, RL = 2 Ω, VGEN = - 10 V, Rg = 1 Ω, P-Ch 3
Rise Time P-ch tr 9 15 ns VDD = - 20 V, RL = 2 Ω, VGEN = - 10 V, Rg = 1 Ω, P-Ch 3
Turn-Off Delay Time P-ch td(off) 23 26 ns VDD = - 20 V, RL = 2 Ω, VGEN = - 10 V, Rg = 1 Ω, P-Ch 3
Fall Time P-ch tf 10 16 ns VDD = - 20 V, RL = 2 Ω, VGEN = - 10 V, Rg = 1 Ω, P-Ch 3
Body Diode Voltage N-ch VSD 0.81 1.2 V IS = 5.4 A, N-Ch 3
Body Diode Voltage P-ch VSD -0.77 -1.2 V IS = - 2 A, P-Ch 3
Body Diode Reverse Recovery Time P-ch trr 31 57 ns IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C, P-Ch 3
Body Diode Reverse Recovery Charge P-ch Qrr 29 47 nC IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C, P-Ch 3
Drain-Source On-State Resistance P-ch RDS(on) 0.04 Ω VGS = - 10 V, ID = - 8 A, P-Ch 2
Drain-Source On-State Resistance N-ch RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A, N-Ch 2
Drain-Source On-State Resistance P-ch RDS(on) 0.05 Ω VGS = - 4.5 V, ID = - 5 A, P-Ch 2

CAD (KiCad official)

  • Symbol: AO4614B&30V-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ao4614b-30v-vb-etched.step / ao4614b-30v-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4614b-30v-vb.step / ao4614b-30v-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 e0675355c279f935, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF