component
AO4614-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
AO4614-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4614-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1, VDS = 40V, ID = 7.2A, RDS(ON) < 26mΩ at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), VGS rated ±20V with threshold 1.0V to 2.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2, VDS = -40V, ID = -6.5A, RDS(ON) < 44mΩ at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), VGS rated ±20V with threshold -1.0V to -2.5V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally to pin 6; VDS rated -40V. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally to pin 5; pulsed drain current -22A. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally to pin 8; VDS rated 40V. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally to pin 7; pulsed drain current 23A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Voltage | VDS | 40 | V | TC=25℃, N-Ch | 1 | ||
| P-Ch Drain-Source Voltage | VDS | -40 | V | TC=25℃, P-Ch | 1 | ||
| N-Ch Gate-Source Voltage | VGS | -20 | 20 | V | N-Ch | 1 | |
| P-Ch Gate-Source Voltage | VGS | -20 | 20 | V | P-Ch | 1 | |
| N-Ch Continuous Drain Current | ID@TA=25℃ | 7.2 | A | VGS @ 10V, N-Ch | 1 | ||
| P-Ch Continuous Drain Current | ID@TA=25℃ | -6.5 | A | VGS @ 10V, P-Ch | 1 | ||
| N-Ch Continuous Drain Current | ID@TA=70℃ | 5.6 | A | VGS @ 10V, N-Ch | 1 | ||
| P-Ch Continuous Drain Current | ID@TA=70℃ | -5.1 | A | VGS @ 10V, P-Ch | 1 | ||
| N-Ch Pulsed Drain Current | IDM | 23 | A | N-Ch | 1 | ||
| P-Ch Pulsed Drain Current | IDM | -22 | A | P-Ch | 1 | ||
| N-Ch Single Pulse Avalanche Energy | EAS | 16.2 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=18A | 1 | ||
| P-Ch Single Pulse Avalanche Energy | EAS | 39 | mJ | VDD=-25V,VGS=-10V,L=0.1mH,IAS=-28A | 1 | ||
| N-Ch Avalanche Current | IAS | 18 | A | N-Ch | 1 | ||
| P-Ch Avalanche Current | IAS | -28 | A | P-Ch | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 1.67 | W | N-Ch and P-Ch | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 75 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 30 | ℃/W | 1 | |||
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V , ID=250uA | 2 | ||
| N-Ch Static Drain-Source On-Resistance | RDS(ON) | 20 | 26 | mΩ | VGS=10V , ID=5A | 2 | |
| N-Ch Static Drain-Source On-Resistance | RDS(ON) | 28 | 33 | mΩ | VGS=4.5V , ID=4A | 2 | |
| N-Ch Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS , ID =250uA | 2 | |
| N-Ch Drain-Source Leakage Current | IDSS | 1 | uA | VDS=32V , VGS=0V , TJ=25℃ | 2 | ||
| N-Ch Drain-Source Leakage Current | IDSS | 5 | uA | VDS=32V , VGS=0V , TJ=55℃ | 2 | ||
| N-Ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| N-Ch Continuous Source Current | IS | 6.1 | A | VG=VD=0V , Force Current | 2 | ||
| N-Ch Pulsed Source Current | ISM | 23 | A | VG=VD=0V , Force Current | 2 | ||
| N-Ch Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V , ID=-250uA | 3 | ||
| P-Ch Static Drain-Source On-Resistance | RDS(ON) | 35 | 44 | mΩ | VGS=-10V , ID=-6A | 3 | |
| P-Ch Static Drain-Source On-Resistance | RDS(ON) | 55 | 68 | mΩ | VGS=-4.5V , ID=-4A | 3 | |
| P-Ch Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS , ID =-250uA | 3 | |
| P-Ch Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-32V , VGS=0V , TJ=25℃ | 3 | ||
| P-Ch Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-32V , VGS=0V , TJ=55℃ | 3 | ||
| P-Ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 3 | |
| P-Ch Continuous Source Current | IS | -6 | A | VG=VD=0V , Force Current | 3 | ||
| P-Ch Pulsed Source Current | ISM | -22 | A | VG=VD=0V , Force Current | 3 | ||
| P-Ch Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 3 | ||
| N-Ch BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.034 | V/℃ | Reference to 25℃ , ID=1mA | 2 | ||
| N-Ch VGS(th) Temperature Coefficient | △VGS(th) | -4.56 | mV/℃ | 2 | |||
| P-Ch BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.02 | V/℃ | Reference to 25℃ , ID=-1mA | 3 | ||
| P-Ch VGS(th) Temperature Coefficient | △VGS(th) | 3.72 | mV/℃ | 3 | |||
| N-Ch Forward Transconductance | gfs | 14 | S | VDS=5V , ID=5A | 2 | ||
| N-Ch Gate Resistance | Rg | 2.6 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | ||
| N-Ch Total Gate Charge (4.5V) | Qg | 5.5 | nC | VDS=20V , VGS=4.5V , ID=5A | 2 | ||
| N-Ch Input Capacitance | Ciss | 593 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| N-Ch Output Capacitance | Coss | 76 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| N-Ch Reverse Transfer Capacitance | Crss | 56 | pF | VDS=15V , VGS=0V , f=1MHz | 2 | ||
| N-Ch Turn-Off Delay Time | Td(off) | 41 | ns | VDD=20V , VGS=10V , RG=3.3 , ID=1A | 2 | ||
| P-Ch Forward Transconductance | gfs | 13 | S | VDS=-5V , ID=-6A | 3 | ||
| P-Ch Total Gate Charge (-4.5V) | Qg | 11.5 | nC | VDS=-20V , VGS=-4.5V , ID=-6A | 3 | ||
| P-Ch Input Capacitance | Ciss | 1415 | pF | VDS=-15V , VGS=0V , f=1MHz | 3 | ||
| P-Ch Output Capacitance | Coss | 134 | pF | VDS=-15V , VGS=0V , f=1MHz | 3 | ||
| P-Ch Reverse Transfer Capacitance | Crss | 102 | pF | VDS=-15V , VGS=0V , f=1MHz | 3 | ||
| P-Ch Turn-Off Delay Time | Td(off) | 59 | ns | VDD=-15V , VGS=-10V , RG=3.3 , ID=-1A | 3 |
CAD (KiCad official)
- Symbol:
AO4614-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4614-hxy-etched.step/ao4614-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4614-hxy.step/ao4614-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (9 pp, sha256
b6c9217c075560b5, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AO4614-HXY
**HXY MOSFET** · MOSFETs · SOP-8
AO4614-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1, VDS = 40V, ID = 7.2A, RDS(ON) < 26mΩ at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), VGS rated ±20V with threshold 1.0V to 2.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2, VDS = -40V, ID = -6.5A, RDS(ON) < 44mΩ at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), VGS rated ±20V with threshold -1.0V to -2.5V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally to pin 6; VDS rated -40V. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied internally to pin 5; pulsed drain current -22A. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally to pin 8; VDS rated 40V. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied internally to pin 7; pulsed drain current 23A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Voltage | VDS | | | 40 | V | TC=25℃, N-Ch | 1 |
| P-Ch Drain-Source Voltage | VDS | | | -40 | V | TC=25℃, P-Ch | 1 |
| N-Ch Gate-Source Voltage | VGS | -20 | | 20 | V | N-Ch | 1 |
| P-Ch Gate-Source Voltage | VGS | -20 | | 20 | V | P-Ch | 1 |
| N-Ch Continuous Drain Current | ID@TA=25℃ | | | 7.2 | A | VGS @ 10V, N-Ch | 1 |
| P-Ch Continuous Drain Current | ID@TA=25℃ | | | -6.5 | A | VGS @ 10V, P-Ch | 1 |
| N-Ch Continuous Drain Current | ID@TA=70℃ | | | 5.6 | A | VGS @ 10V, N-Ch | 1 |
| P-Ch Continuous Drain Current | ID@TA=70℃ | | | -5.1 | A | VGS @ 10V, P-Ch | 1 |
| N-Ch Pulsed Drain Current | IDM | | | 23 | A | N-Ch | 1 |
| P-Ch Pulsed Drain Current | IDM | | | -22 | A | P-Ch | 1 |
| N-Ch Single Pulse Avalanche Energy | EAS | | | 16.2 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=18A | 1 |
| P-Ch Single Pulse Avalanche Energy | EAS | | | 39 | mJ | VDD=-25V,VGS=-10V,L=0.1mH,IAS=-28A | 1 |
| N-Ch Avalanche Current | IAS | | | 18 | A | N-Ch | 1 |
| P-Ch Avalanche Current | IAS | | | -28 | A | P-Ch | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 1.67 | W | N-Ch and P-Ch | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 75 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 30 | ℃/W | | 1 |
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS=0V , ID=250uA | 2 |
| N-Ch Static Drain-Source On-Resistance | RDS(ON) | | 20 | 26 | mΩ | VGS=10V , ID=5A | 2 |
| N-Ch Static Drain-Source On-Resistance | RDS(ON) | | 28 | 33 | mΩ | VGS=4.5V , ID=4A | 2 |
| N-Ch Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VGS=VDS , ID =250uA | 2 |
| N-Ch Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=32V , VGS=0V , TJ=25℃ | 2 |
| N-Ch Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=32V , VGS=0V , TJ=55℃ | 2 |
| N-Ch Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V , VDS=0V | 2 |
| N-Ch Continuous Source Current | IS | | | 6.1 | A | VG=VD=0V , Force Current | 2 |
| N-Ch Pulsed Source Current | ISM | | | 23 | A | VG=VD=0V , Force Current | 2 |
| N-Ch Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V , ID=-250uA | 3 |
| P-Ch Static Drain-Source On-Resistance | RDS(ON) | | 35 | 44 | mΩ | VGS=-10V , ID=-6A | 3 |
| P-Ch Static Drain-Source On-Resistance | RDS(ON) | | 55 | 68 | mΩ | VGS=-4.5V , ID=-4A | 3 |
| P-Ch Gate Threshold Voltage | VGS(th) | -1 | | -2.5 | V | VGS=VDS , ID =-250uA | 3 |
| P-Ch Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=-32V , VGS=0V , TJ=25℃ | 3 |
| P-Ch Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=-32V , VGS=0V , TJ=55℃ | 3 |
| P-Ch Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V , VDS=0V | 3 |
| P-Ch Continuous Source Current | IS | | | -6 | A | VG=VD=0V , Force Current | 3 |
| P-Ch Pulsed Source Current | ISM | | | -22 | A | VG=VD=0V , Force Current | 3 |
| P-Ch Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 3 |
| N-Ch BVDSS Temperature Coefficient | △BVDSS/△TJ | | 0.034 | | V/℃ | Reference to 25℃ , ID=1mA | 2 |
| N-Ch VGS(th) Temperature Coefficient | △VGS(th) | | -4.56 | | mV/℃ | | 2 |
| P-Ch BVDSS Temperature Coefficient | △BVDSS/△TJ | | -0.02 | | V/℃ | Reference to 25℃ , ID=-1mA | 3 |
| P-Ch VGS(th) Temperature Coefficient | △VGS(th) | | 3.72 | | mV/℃ | | 3 |
| N-Ch Forward Transconductance | gfs | | 14 | | S | VDS=5V , ID=5A | 2 |
| N-Ch Gate Resistance | Rg | | 2.6 | | Ω | VDS=0V , VGS=0V , f=1MHz | 2 |
| N-Ch Total Gate Charge (4.5V) | Qg | | 5.5 | | nC | VDS=20V , VGS=4.5V , ID=5A | 2 |
| N-Ch Input Capacitance | Ciss | | 593 | | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| N-Ch Output Capacitance | Coss | | 76 | | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| N-Ch Reverse Transfer Capacitance | Crss | | 56 | | pF | VDS=15V , VGS=0V , f=1MHz | 2 |
| N-Ch Turn-Off Delay Time | Td(off) | | 41 | | ns | VDD=20V , VGS=10V , RG=3.3 , ID=1A | 2 |
| P-Ch Forward Transconductance | gfs | | 13 | | S | VDS=-5V , ID=-6A | 3 |
| P-Ch Total Gate Charge (-4.5V) | Qg | | 11.5 | | nC | VDS=-20V , VGS=-4.5V , ID=-6A | 3 |
| P-Ch Input Capacitance | Ciss | | 1415 | | pF | VDS=-15V , VGS=0V , f=1MHz | 3 |
| P-Ch Output Capacitance | Coss | | 134 | | pF | VDS=-15V , VGS=0V , f=1MHz | 3 |
| P-Ch Reverse Transfer Capacitance | Crss | | 102 | | pF | VDS=-15V , VGS=0V , f=1MHz | 3 |
| P-Ch Turn-Off Delay Time | Td(off) | | 59 | | ns | VDD=-15V , VGS=-10V , RG=3.3 , ID=-1A | 3 |
## CAD (KiCad official)
- Symbol: `AO4614-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4614-hxy-etched.step` / `ao4614-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4614-hxy.step` / `ao4614-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/ao4614-hxy-datasheet.pdf) (9 pp, sha256 `b6c9217c075560b5`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ao4614-hxy-datasheet.pdf)