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AO4614&-30-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4614&-30-VB

VBsemi Elec · MOSFETs · SO-8

AO4614&-30-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (channel 1), 30 V VDS rated.
2 G1 input Gate of the N-channel MOSFET (channel 1), VGS maximum ±20 V.
3 S2 passive Source of the P-channel MOSFET (channel 2), -30 V VDS rated.
4 G2 input Gate of the P-channel MOSFET (channel 2), VGS maximum ±20 V.
5 D2 passive Drain of the P-channel MOSFET (channel 2), tied internally with pin 6.
6 D2 passive Drain of the P-channel MOSFET (channel 2), tied internally with pin 5.
7 D1 passive Drain of the N-channel MOSFET (channel 1), tied internally with pin 8.
8 D1 passive Drain of the N-channel MOSFET (channel 1), tied internally with pin 7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage N-ch VDS 30 V N-Channel, TA=25 °C 1
Drain-Source Voltage P-ch VDS -30 V P-Channel, TA=25 °C 1
Gate-Source Voltage VGS -20 20 V N- and P-Channel, ± 20 1
Continuous Drain Current N-ch ID 8 A N-Channel, TC=25 °C, TJ=150 °C, package limited 1
Continuous Drain Current P-ch ID -8 A P-Channel, TC=25 °C, TJ=150 °C, package limited 1
Pulsed Drain Current N-ch IDM 40 A N-Channel, 10 µs pulse width 1
Pulsed Drain Current P-ch IDM -40 A P-Channel, 10 µs pulse width 1
Single Pulse Avalanche Current N-ch IAS 10 A N-Channel, L = 0.1 mH 1
Single Pulse Avalanche Current P-ch IAS 20 A P-Channel, L = 0.1 mH 1
Maximum Power Dissipation PD 2 W TA=25 °C, N- and P-Channel 1
Maximum Power Dissipation PD 1.28 W TA=70 °C, N- and P-Channel 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance N-ch RthJA 50 62.5 °C/W N-Channel, t ≤ 10 s 1
Junction-to-Ambient Thermal Resistance P-ch RthJA 47 62.5 °C/W P-Channel, t ≤ 10 s 1
Junction-to-Foot Thermal Resistance N-ch RthJF 30 40 °C/W N-Channel, steady state 1
Junction-to-Foot Thermal Resistance P-ch RthJF 29 38 °C/W P-Channel, steady state 1
Drain-Source Breakdown Voltage P-ch VDS -30 V VGS = 0 V, ID = - 250 µA, P-Ch 2
Gate Threshold Voltage N-ch VGS(th) 1 2 V VDS = VGS, ID = 250 µA, N-Ch 2
Gate-Body Leakage N-ch IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V, N-Ch 2
Gate-Body Leakage P-ch IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V, P-Ch 2
Zero Gate Voltage Drain Current N-ch IDSS 1 µA VDS = 30 V, VGS = 0 V, N-Ch 2
Zero Gate Voltage Drain Current P-ch IDSS -1 µA VDS = - 30 V, VGS = 0 V, P-Ch 2
Zero Gate Voltage Drain Current N-ch IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Ch 2
Zero Gate Voltage Drain Current P-ch IDSS -10 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C, P-Ch 2
On-State Drain Current N-ch ID(on) 20 A VDS = 5 V, VGS = 10 V, N-Ch 2
On-State Drain Current P-ch ID(on) -20 A VDS = - 5 V, VGS = - 10 V, P-Ch 2
Drain-Source On-State Resistance N-ch RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A, N-Ch 2
Drain-Source On-State Resistance N-ch RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A, N-Ch 2
Drain-Source On-State Resistance P-ch RDS(on) 0.04 Ω VGS = - 10 V, ID = - 8 A, P-Ch 2
Drain-Source On-State Resistance P-ch RDS(on) 0.044 Ω VGS = - 8 V, ID = - 6.5 A, P-Ch 2
Drain-Source On-State Resistance P-ch RDS(on) 0.05 Ω VGS = - 4.5 V, ID = - 5 A, P-Ch 2
Forward Transconductance N-ch gfs 27 S VDS = 15 V, ID = 6.8 A, N-Ch 2
Forward Transconductance P-ch gfs 25 S VDS = - 15 V, ID = - 6.7 A, P-Ch 2
Gate Resistance N-ch Rg 0.3 1 2.3 Ω f = 1 MHz, N-Ch 2
Gate Resistance P-ch Rg 1.2 5.7 9.6 Ω f = 1 MHz, P-Ch 2
Continuous Source-Drain Diode Current N-ch IS 2.6 A TC = 25 °C, N-Ch 3
Continuous Source-Drain Diode Current P-ch IS -2.6 A TC = 25 °C, P-Ch 3
Body Diode Voltage N-ch VSD 0.81 1.2 V IS = 5.4 A, N-Ch 3
Body Diode Voltage P-ch VSD -1.2 -0.77 V IS = - 2 A, P-Ch 3
Turn-On Delay Time P-ch td(on) 10 16 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω, P-Ch 3
Rise Time P-ch tr 9 15 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω, P-Ch 3
Fall Time P-ch tf 10 16 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω, P-Ch 3
Body Diode Reverse Recovery Time P-ch trr 31 57 ns IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C, P-Ch 3
Body Diode Reverse Recovery Charge N-ch Qrr 10 17 nC IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C, N-Ch 3
Body Diode Reverse Recovery Charge P-ch Qrr 29 47 nC IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C, P-Ch 3

CAD (KiCad official)

  • Symbol: AO4614&-30-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ao4614-30-vb-etched.step / ao4614-30-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4614-30-vb.step / ao4614-30-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 f44a3baee38597d1, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF