component
AO4612-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownAO4612-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4612-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (channel 1), rated VDS 60V and ID 5A at TA=25°C. |
| 2 | G1 | input | Gate of the N-channel MOSFET (channel 1), absolute maximum VGS ±20V with RDS(ON) specified at VGS=10V and 4.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (channel 2), rated VDS -60V and ID -4A at TA=25°C. |
| 4 | G2 | input | Gate of the P-channel MOSFET (channel 2), absolute maximum VGS ±20V with RDS(ON) specified at VGS=-10V and -4.5V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (channel 2), VDS -60V maximum and pulsed IDM -13A. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (channel 2), tied with pin 5, VDS -60V maximum and pulsed IDM -13A. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (channel 1), VDS 60V maximum and pulsed IDM 15A. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (channel 1), tied with pin 7, VDS 60V maximum and pulsed IDM 15A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 60 | 65 | V | VGS=0V, ID=250uA | 2 | |
| N-Ch Static Drain-Source On-Resistance | RDS(ON) | 60 | 70 | mΩ | VGS=10V, ID=5A | 2 | |
| N-Ch Static Drain-Source On-Resistance | RDS(ON) | 78 | 90 | mΩ | VGS=4.5V, ID=4A | 2 | |
| N-Ch Gate Threshold Voltage | VGS(th) | 1.2 | 1.75 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| N-Ch Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 | ||
| N-Ch Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 2 | ||
| N-Ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| N-Ch Continuous Source Current | IS | 2.5 | A | VG=VD=0V, Force Current | 2 | ||
| N-Ch Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -60 | -65 | V | VGS=0V, ID=-250uA | 3 | |
| P-Ch Static Drain-Source On-Resistance | RDS(ON) | 120 | 140 | mΩ | VGS=-10V, ID=-3A | 3 | |
| P-Ch Static Drain-Source On-Resistance | RDS(ON) | 190 | 210 | mΩ | VGS=-4.5V, ID=-2A | 3 | |
| P-Ch Gate Threshold Voltage | VGS(th) | -1.2 | 1.75 | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| P-Ch Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 3 | ||
| P-Ch Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 3 | ||
| P-Ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| P-Ch Continuous Source Current | IS | -2.5 | A | VG=VD=0V, Force Current | 3 | ||
| P-Ch Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 | ||
| N-Ch Drain-Source Voltage | VDS | 60 | V | TC=25℃ | 1 | ||
| P-Ch Drain-Source Voltage | VDS | -60 | V | TC=25℃ | 1 | ||
| N-Ch Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| P-Ch Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| N-Ch Continuous Drain Current | ID@TA=25℃ | 5 | A | VGS @ 10V | 1 | ||
| P-Ch Continuous Drain Current | ID@TA=25℃ | -4 | A | VGS @ 10V | 1 | ||
| N-Ch Continuous Drain Current | ID@TA=70℃ | 3.2 | A | VGS @ 10V | 1 | ||
| P-Ch Continuous Drain Current | ID@TA=70℃ | -2.6 | A | VGS @ 10V | 1 | ||
| N-Ch Pulsed Drain Current | IDM | 15 | A | 1 | |||
| P-Ch Pulsed Drain Current | IDM | -13 | A | 1 | |||
| N-Ch Single Pulse Avalanche Energy | EAS | 22 | mJ | 1 | |||
| P-Ch Single Pulse Avalanche Energy | EAS | 28.8 | mJ | 1 | |||
| N-Ch Avalanche Current | IAS | 21 | A | 1 | |||
| P-Ch Avalanche Current | IAS | -24 | A | 1 | |||
| Total Power Dissipation (N-Ch) | PD@TA=25℃ | 2 | W | 1 | |||
| Total Power Dissipation (P-Ch) | PD@TA=25℃ | 2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 85 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 62.5 | ℃/W | 1 | |||
| N-Ch BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.063 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| N-Ch VGS(th) Temperature Coefficient | △VGS(th) | -5.24 | mV/℃ | 2 | |||
| P-Ch BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.03 | V/℃ | Reference to 25℃, ID=-1mA | 3 | ||
| N-Ch Forward Transconductance | gfs | 28 | S | VDS=5V, ID=4A | 2 | ||
| N-Ch Total Gate Charge (4.5V) | Qg | 19 | nC | VDS=48V, VGS=4.5V, ID=4A | 2 | ||
| N-Ch Input Capacitance | Ciss | 1027 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| P-Ch Forward Transconductance | gfs | 8.5 | S | VDS=-5V, ID=-3A | 3 | ||
| P-Ch Total Gate Charge (-4.5V) | Qg | 12.1 | nC | VDS=-48V, VGS=-4.5V, ID=-3A | 3 | ||
| P-Ch Input Capacitance | Ciss | 1137 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
AO4612-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4612-hxy-etched.step/ao4612-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4612-hxy.step/ao4612-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (9 pp, sha256
79bd8dc1036c5baa, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).