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AO4611-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4611-VB

VBsemi Elec · MOSFETs · SO-8

AO4611-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (60 V VDS, 5.3 A, RDS(on) 0.026 Ω at VGS = 10 V).
2 G1 input Gate of the N-channel MOSFET, rated ±20 V VGS with threshold 1 to 3 V at 250 µA.
3 S2 passive Source of the P-channel MOSFET (-60 V VDS, -4.9 A, RDS(on) 0.055 Ω at VGS = -10 V).
4 G2 input Gate of the P-channel MOSFET, rated ±20 V VGS with threshold -1 to -3 V at -250 µA.
5 D2 passive Drain of the P-channel MOSFET, rated -60 V VDS, tied internally with pin 6.
6 D2 passive Drain of the P-channel MOSFET, rated -60 V VDS, tied internally with pin 5.
7 D1 passive Drain of the N-channel MOSFET, rated 60 V VDS, tied internally with pin 8.
8 D1 passive Drain of the N-channel MOSFET, rated 60 V VDS, tied internally with pin 7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 60 V TA = 25 °C 1
Drain-Source Voltage (P-Ch) VDS -60 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Pulsed Drain Current (N-Ch) IDM 20 A 10 µs pulse width 1
Pulsed Drain Current (P-Ch) IDM -25 A 10 µs pulse width 1
Single Pulse Avalanche Current (N-Ch) IAS 11 A L = 0.1 mH 1
Single Pulse Avalanche Current (P-Ch) IAS 15 A L = 0.1 mH 1
Single Pulse Avalanche Energy (N-Ch) EAS 6.1 mJ L = 0.1 mH 1
Single Pulse Avalanche Energy (P-Ch) EAS 11 mJ L = 0.1 mH 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance (N-Ch) RthJA 55 62.5 °C/W t ≤ 10 s, surface mounted 1" x 1" FR4 1
Junction-to-Ambient Thermal Resistance (P-Ch) RthJA 53 62.5 °C/W t ≤ 10 s, surface mounted 1" x 1" FR4 1
Junction-to-Foot Thermal Resistance (N-Ch) RthJF 33 40 °C/W Steady State 1
Junction-to-Foot Thermal Resistance (P-Ch) RthJF 30 37 °C/W Steady State 1
Drain-Source Breakdown Voltage (N-Ch) VDS 60 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage (P-Ch) VDS -60 V VGS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage (P-Ch) VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage (N-Ch) IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Gate-Body Leakage (P-Ch) IGSS -100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -1 µA VDS = - 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 10 µA VDS = 60 V, VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -10 µA VDS = - 60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current (N-Ch) ID(on) 20 A VDS ≥ 5 V, VGS = 10 V 2
On-State Drain Current (P-Ch) ID(on) -25 A VDS ≤ - 5 V, VGS = - 10 V 2
Drain-Source On-State Resistance (N-Ch) RDS(on) 0.029 Ω VGS = 4.5 V, ID = 3.9 A 2
Drain-Source On-State Resistance (P-Ch) RDS(on) 0.055 Ω VGS = - 10 V, ID = - 3.1 A 2
Drain-Source On-State Resistance (P-Ch) RDS(on) 0.06 Ω VGS = - 4.5 V, ID = - 0.2 A 2
Total Gate Charge (N-Ch) Qg 13 20 nC VDS = 30 V, VGS = 10 V, ID = 4.3 A 2
Total Gate Charge (P-Ch) Qg 14.5 22 nC VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A 2
Total Gate Charge (N-Ch) Qg 6 9 nC VDS = 30 V, VGS = 4.5 V, ID = 4.3 A 2
Total Gate Charge (P-Ch) Qg 8 12 nC VDS = - 30 V, VGS = - 4.5 V, ID = - 3.1 A 2
Gate Resistance (N-Ch) Rg 2 3 Ω f = 1 MHz 2
Gate Resistance (P-Ch) Rg 14 20 Ω f = 1 MHz 2
Turn-On Delay Time (N-Ch) td(on) 15 25 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω 3
Turn-On Delay Time (P-Ch) td(on) 30 45 ns VDD = - 30 V, RL = 12.5 Ω, ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω 3
Rise Time (N-Ch) tr 65 100 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω 3
Rise Time (P-Ch) tr 70 105 ns VDD = - 30 V, RL = 12.5 Ω, ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω 3
Turn-Off Delay Time (N-Ch) td(off) 15 25 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω 3
Turn-Off Delay Time (P-Ch) td(off) 40 60 ns VDD = - 30 V, RL = 12.5 Ω, ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω 3
Fall Time (N-Ch) tf 10 15 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω 3
Fall Time (P-Ch) tf 30 45 ns VDD = - 30 V, RL = 12.5 Ω, ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω 3
Turn-On Delay Time (N-Ch) td(on) 10 15 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-On Delay Time (P-Ch) td(on) 10 15 ns VDD = - 30 V, RL = 12.5 Ω, ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω 3
Rise Time (N-Ch) tr 15 25 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω 3
Rise Time (P-Ch) tr 13 20 ns VDD = - 30 V, RL = 12.5 Ω, ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω 3
Turn-Off Delay Time (N-Ch) td(off) 20 30 ns VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-Off Delay Time (P-Ch) td(off) 35 55 ns VDD = - 30 V, RL = 12.5 Ω, ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω 3
Continuous Source-Drain Diode Current (N-Ch) IS 2.6 A TC = 25 °C 3
Continuous Source-Drain Diode Current (P-Ch) IS -2.8 A TC = 25 °C 3
Pulse Diode Forward Current (N-Ch) ISM 20 A 3
Pulse Diode Forward Current (P-Ch) ISM -25 A 3
Body Diode Voltage (N-Ch) VSD 0.8 1.2 V IS = 1.7 A 3
Body Diode Voltage (P-Ch) VSD -0.8 -1.2 V IS = - 2 A 3
Body Diode Reverse Recovery Time (N-Ch) trr 30 60 ns IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Time (P-Ch) trr 30 50 ns IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge (N-Ch) Qrr 32 50 nC IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge (P-Ch) Qrr 35 60 nC IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C 3

CAD (KiCad official)

  • Symbol: AO4611-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ao4611-vb-etched.step / ao4611-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4611-vb.step / ao4611-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 33840cb7fa2a619b, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF