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AO4606-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4606-VB

VBsemi Elec · MOSFETs · SO-8

AO4606-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive N-channel MOSFET source terminal; the N-channel device is rated VDS 30 V with VGS ±20 V.
2 G1 input N-channel MOSFET gate terminal; VGS is limited to ±20 V.
3 S2 passive P-channel MOSFET source terminal; the P-channel device is rated VDS -30 V with VGS ±20 V.
4 G2 input P-channel MOSFET gate terminal; VGS is limited to ±20 V.
5 D2 passive P-channel MOSFET drain terminal, rated for -30 V drain-source voltage (pins 5 and 6 are tied together as D2).
6 D2 passive P-channel MOSFET drain terminal, rated for -30 V drain-source voltage (pins 5 and 6 are tied together as D2).
7 D1 passive N-channel MOSFET drain terminal, rated for 30 V drain-source voltage (pins 7 and 8 are tied together as D1).
8 D1 passive N-channel MOSFET drain terminal, rated for 30 V drain-source voltage (pins 7 and 8 are tied together as D1).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-Ch Drain-Source Voltage VDS 30 V 1
P-Ch Drain-Source Voltage VDS -30 V 1
N-Ch Gate-Source Voltage VGS -20 20 V 1
P-Ch Gate-Source Voltage VGS -20 20 V 1
N-Ch Continuous Drain Current ID 8 A TC = 25 °C (TJ = 150 °C) 1
P-Ch Continuous Drain Current ID -8 A TC = 25 °C (TJ = 150 °C) 1
N-Ch Continuous Drain Current ID 6.8 A TC = 70 °C 1
P-Ch Continuous Drain Current ID -6.8 A TC = 70 °C 1
P-Ch Continuous Drain Current ID -6.6 A TA = 25 °C 1
N-Ch Continuous Drain Current ID 5.4 A TA = 70 °C 1
P-Ch Continuous Drain Current ID -5.3 A TA = 70 °C 1
N-Ch Pulsed Drain Current IDM 40 A 10 µs pulse width 1
P-Ch Pulsed Drain Current IDM -40 A 10 µs pulse width 1
N-Ch Source-Drain Diode Current IS 2.6 A TC = 25 °C 1
P-Ch Source-Drain Diode Current IS -2.6 A TC = 25 °C 1
N-Ch Source-Drain Diode Current IS 1.6 A TA = 25 °C 1
P-Ch Source-Drain Diode Current IS -1.6 A TA = 25 °C 1
N-Ch Pulsed Source-Drain Current ISM 40 A 1
P-Ch Pulsed Source-Drain Current ISM -40 A 1
N-Ch Single Pulse Avalanche Current IAS 10 A L = 0.1 mH 1
P-Ch Single Pulse Avalanche Current IAS -20 A L = 0.1 mH 1
N-Ch Single Pulse Avalanche Energy EAS 5 mJ 1
P-Ch Single Pulse Avalanche Energy EAS 20 mJ 1
N-Ch Maximum Power Dissipation PD 3.1 W TC = 25 °C 1
P-Ch Maximum Power Dissipation PD 3.2 W TC = 25 °C 1
N-Ch Maximum Power Dissipation PD 2 W TC = 70 °C 1
P-Ch Maximum Power Dissipation PD 2.1 W TC = 70 °C 1
P-Ch Maximum Power Dissipation PD 2 W TA = 25 °C 1
N-Ch Maximum Power Dissipation PD 1.28 W TA = 70 °C 1
P-Ch Maximum Power Dissipation PD 1.28 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
N-Ch Maximum Junction-to-Ambient RthJA 50 62.5 °C/W t ≤ 10 s 1
P-Ch Maximum Junction-to-Ambient RthJA 47 62.5 °C/W t ≤ 10 s 1
N-Ch Maximum Junction-to-Ambient (steady state) RthJA 120 °C/W Steady state (footnote d) 1
P-Ch Maximum Junction-to-Ambient (steady state) RthJA 110 °C/W Steady state (footnote d) 1
N-Ch Maximum Junction-to-Foot (Drain) RthJF 30 40 °C/W Steady state 1
P-Ch Maximum Junction-to-Foot (Drain) RthJF 29 38 °C/W Steady state 1
N-Ch Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
P-Ch Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
N-Ch Gate Threshold Voltage VGS(th) 1 2 V VDS = VGS, ID = 250 µA 2
P-Ch Gate Threshold Voltage VGS(th) -1 -2 V VDS = VGS, ID = -250 µA 2
N-Ch Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
P-Ch Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
N-Ch Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
P-Ch Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
N-Ch Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
P-Ch Zero Gate Voltage Drain Current IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
N-Ch Body Diode Forward Voltage VSD 0.81 1.2 V IS = 5.4 A 3
P-Ch Body Diode Forward Voltage VSD -0.77 -1.2 V IS = -2 A 3
N-Ch On-State Drain Current ID(on) 20 A VDS = 5 V, VGS = 10 V 2
P-Ch On-State Drain Current ID(on) -20 A VDS = -5 V, VGS = -10 V 2
N-Ch Drain-Source On-State Resistance RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A 2
N-Ch Drain-Source On-State Resistance RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A 2
P-Ch Drain-Source On-State Resistance RDS(on) 0.04 Ω VGS = -10 V, ID = -8 A 2
P-Ch Drain-Source On-State Resistance RDS(on) 0.044 Ω VGS = -8 V, ID = -6.5 A 2
P-Ch Drain-Source On-State Resistance RDS(on) 0.05 Ω VGS = -4.5 V, ID = -5 A 2

CAD (KiCad official)

  • Symbol: AO4606-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ao4606-vb-etched.step / ao4606-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4606-vb.step / ao4606-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 1b37c2e14da181cf, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF