component
AO4606-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AO4606-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4606-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1, VDS = 30V, ID = 6A). |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), VGS rated ±20V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2, VDS = -30V, ID = -5.5A). |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), VGS rated ±20V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied to pin 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied to pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied to pin 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied to pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N) | VDS | 30 | V | N-Channel | 1 | ||
| Drain-Source Voltage (P) | VDS | -30 | V | P-Channel | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | both channels, ±20 | 1 | |
| Continuous Drain Current (N) | ID | 6 | A | TA=25℃, VGS @ 10V, N-Channel | 1 | ||
| Continuous Drain Current (P) | ID | -5.5 | A | TA=25℃, VGS @ 10V, P-Channel | 1 | ||
| Continuous Drain Current (N) | ID | 5 | A | TA=70℃, VGS @ 10V, N-Channel | 1 | ||
| Continuous Drain Current (P) | ID | -4.3 | A | TA=70℃, VGS @ 10V, P-Channel | 1 | ||
| Pulsed Drain Current (N) | IDM | 30 | A | N-Channel | 1 | ||
| Pulsed Drain Current (P) | IDM | -30 | A | P-Channel | 1 | ||
| Single Pulse Avalanche Energy (N) | EAS | 5 | mJ | N-Channel | 1 | ||
| Single Pulse Avalanche Energy (P) | EAS | 26 | mJ | P-Channel | 1 | ||
| Total Power Dissipation | PD | 2 | W | TA=25℃, each channel | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 40 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage (N) | BVDSS | 30 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (N) | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (N) | IDSS | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current (N) | IGSS | 100 | nA | VDS=0V, VGS=±20V | 2 | ||
| Gate Threshold Voltage (N) | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS=VGS ID=250µA | 2 |
| On state drain current (N) | ID(ON) | 30 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance (N) | RDS(ON) | 16 | 22 | mΩ | VGS=10V, ID=6A | 2 | |
| Static Drain-Source On-Resistance (N) | RDS(ON) | 22 | 30 | mΩ | VGS=10V, ID=6A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance (N) | RDS(ON) | 32 | 40 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Forward Transconductance (N) | gFS | 15 | S | VDS=5V, ID=6A | 2 | ||
| Diode Forward Voltage (N) | VSD | 0.76 | 1 | V | IS=1A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current (N) | IS | 2.5 | A | 2 | |||
| Input Capacitance (N) | Ciss | 200 | 255 | 310 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance (N) | Coss | 30 | 45 | 60 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance (N) | Crss | 20 | 35 | 50 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate resistance (N) | Rg | 1.6 | 3.25 | 4.9 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge 10V (N) | Qg | 4 | 5.2 | 6 | nC | VGS=10V, VDS=15V, ID=6A | 2 |
| Total Gate Charge 4.5V (N) | Qg | 2 | 2.55 | 3 | nC | VGS=4.5V, VDS=15V, ID=6A | 2 |
| Body Diode Reverse Recovery Time (N) | trr | 8.5 | 12 | ns | IF=6A, dI/dt=100A/µs | 2 | |
| Body Diode Reverse Recovery Charge (N) | Qrr | 2.2 | 3 | nC | IF=6A, dI/dt=100A/µs | 2 | |
| Gate Source Charge (N) | Qgs | 0.85 | nC | 2 | |||
| Gate Drain Charge (N) | Qgd | 1.3 | nC | 2 | |||
| Turn-On Delay Time (N) | tD(on) | 4.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time (N) | tr | 2.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time (N) | tD(off) | 14.5 | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time (N) | tf | 3.5 | ns | RGEN=3Ω | 2 | ||
| Drain-Source Breakdown Voltage (P) | BVDSS | -30 | V | ID=-250µA, VGS=0V | 6 | ||
| Zero Gate Voltage Drain Current (P) | IDSS | -1 | µA | VDS=-30V, VGS=0V | 6 | ||
| Zero Gate Voltage Drain Current (P) | IDSS | -5 | µA | VDS=-30V, VGS=0V, TJ=55°C | 6 | ||
| Gate-Body leakage current (P) | IGSS | 100 | nA | VDS=0V, VGS=±20V | 6 | ||
| Gate Threshold Voltage (P) | VGS(th) | -1.3 | -1.85 | -2.4 | V | VDS=VGS ID=-250µA | 6 |
| On state drain current (P) | ID(ON) | -30 | A | VGS=-10V, VDS=-5V | 6 | ||
| Static Drain-Source On-Resistance (P) | RDS(ON) | 36 | 45 | mΩ | VGS=-10V, ID=-6.5A | 6 | |
| Static Drain-Source On-Resistance (P) | RDS(ON) | 68 | 77 | mΩ | VGS=-4.5V, ID=-5A | 6 | |
| Forward Transconductance (P) | gFS | 18 | S | VDS=-5V, ID=-6.5A | 6 | ||
| Diode Forward Voltage (P) | VSD | -0.8 | -1 | V | IS=-1A,VGS=0V | 6 | |
| Maximum Body-Diode Continuous Current (P) | IS | -2.5 | A | 6 | |||
| Gate resistance (P) | Rg | 1.5 | 3.2 | 5 | Ω | VGS=0V, VDS=0V, f=1MHz | 6 |
| Total Gate Charge 10V (P) | Qg | 13.6 | 16 | nC | VGS=10V, VDS=-15V, ID=-6.5A | 6 | |
| Total Gate Charge 4.5V (P) | Qg | 6.7 | 8 | nC | 6 | ||
| Body Diode Reverse Recovery Time (P) | trr | 15 | ns | IF=-6.5A, dI/dt=100A/µs | 6 | ||
| Input Capacitance (P) | Ciss | 760 | pF | VGS=0V, VDS=-15V, f=1MHz | 6 | ||
| Output Capacitance (P) | Coss | 140 | pF | VGS=0V, VDS=-15V, f=1MHz | 6 | ||
| Reverse Transfer Capacitance (P) | Crss | 95 | pF | VGS=0V, VDS=-15V, f=1MHz | 6 | ||
| Body Diode Reverse Recovery Charge (P) | Qrr | 9.7 | nC | IF=-6.5A, dI/dt=100A/µs | 6 |
CAD (KiCad official)
- Symbol:
AO4606-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4606-hxy-etched.step/ao4606-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4606-hxy.step/ao4606-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (11 pp, sha256
7e3739b5db87eb12, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AO4606-HXY
**HXY MOSFET** · MOSFETs · SOP-8
AO4606-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1, VDS = 30V, ID = 6A). |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), VGS rated ±20V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2, VDS = -30V, ID = -5.5A). |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), VGS rated ±20V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied to pin 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), tied to pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied to pin 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), tied to pin 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N) | VDS | | | 30 | V | N-Channel | 1 |
| Drain-Source Voltage (P) | VDS | | | -30 | V | P-Channel | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | both channels, ±20 | 1 |
| Continuous Drain Current (N) | ID | | | 6 | A | TA=25℃, VGS @ 10V, N-Channel | 1 |
| Continuous Drain Current (P) | ID | | | -5.5 | A | TA=25℃, VGS @ 10V, P-Channel | 1 |
| Continuous Drain Current (N) | ID | | | 5 | A | TA=70℃, VGS @ 10V, N-Channel | 1 |
| Continuous Drain Current (P) | ID | | | -4.3 | A | TA=70℃, VGS @ 10V, P-Channel | 1 |
| Pulsed Drain Current (N) | IDM | | | 30 | A | N-Channel | 1 |
| Pulsed Drain Current (P) | IDM | | | -30 | A | P-Channel | 1 |
| Single Pulse Avalanche Energy (N) | EAS | | | 5 | mJ | N-Channel | 1 |
| Single Pulse Avalanche Energy (P) | EAS | | | 26 | mJ | P-Channel | 1 |
| Total Power Dissipation | PD | | | 2 | W | TA=25℃, each channel | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62.5 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 40 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage (N) | BVDSS | 30 | | | V | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (N) | IDSS | | | 1 | µA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (N) | IDSS | | | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 |
| Gate-Body leakage current (N) | IGSS | | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage (N) | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS=VGS ID=250µA | 2 |
| On state drain current (N) | ID(ON) | 30 | | | A | VGS=10V, VDS=5V | 2 |
| Static Drain-Source On-Resistance (N) | RDS(ON) | | 16 | 22 | mΩ | VGS=10V, ID=6A | 2 |
| Static Drain-Source On-Resistance (N) | RDS(ON) | | 22 | 30 | mΩ | VGS=10V, ID=6A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance (N) | RDS(ON) | | 32 | 40 | mΩ | VGS=4.5V, ID=5A | 2 |
| Forward Transconductance (N) | gFS | | 15 | | S | VDS=5V, ID=6A | 2 |
| Diode Forward Voltage (N) | VSD | | 0.76 | 1 | V | IS=1A,VGS=0V | 2 |
| Maximum Body-Diode Continuous Current (N) | IS | | | 2.5 | A | | 2 |
| Input Capacitance (N) | Ciss | 200 | 255 | 310 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance (N) | Coss | 30 | 45 | 60 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance (N) | Crss | 20 | 35 | 50 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate resistance (N) | Rg | 1.6 | 3.25 | 4.9 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge 10V (N) | Qg | 4 | 5.2 | 6 | nC | VGS=10V, VDS=15V, ID=6A | 2 |
| Total Gate Charge 4.5V (N) | Qg | 2 | 2.55 | 3 | nC | VGS=4.5V, VDS=15V, ID=6A | 2 |
| Body Diode Reverse Recovery Time (N) | trr | | 8.5 | 12 | ns | IF=6A, dI/dt=100A/µs | 2 |
| Body Diode Reverse Recovery Charge (N) | Qrr | | 2.2 | 3 | nC | IF=6A, dI/dt=100A/µs | 2 |
| Gate Source Charge (N) | Qgs | | 0.85 | | nC | | 2 |
| Gate Drain Charge (N) | Qgd | | 1.3 | | nC | | 2 |
| Turn-On Delay Time (N) | tD(on) | | 4.5 | | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time (N) | tr | | 2.5 | | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time (N) | tD(off) | | 14.5 | | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time (N) | tf | | 3.5 | | ns | RGEN=3Ω | 2 |
| Drain-Source Breakdown Voltage (P) | BVDSS | -30 | | | V | ID=-250µA, VGS=0V | 6 |
| Zero Gate Voltage Drain Current (P) | IDSS | | | -1 | µA | VDS=-30V, VGS=0V | 6 |
| Zero Gate Voltage Drain Current (P) | IDSS | | | -5 | µA | VDS=-30V, VGS=0V, TJ=55°C | 6 |
| Gate-Body leakage current (P) | IGSS | | | 100 | nA | VDS=0V, VGS=±20V | 6 |
| Gate Threshold Voltage (P) | VGS(th) | -1.3 | -1.85 | -2.4 | V | VDS=VGS ID=-250µA | 6 |
| On state drain current (P) | ID(ON) | -30 | | | A | VGS=-10V, VDS=-5V | 6 |
| Static Drain-Source On-Resistance (P) | RDS(ON) | | 36 | 45 | mΩ | VGS=-10V, ID=-6.5A | 6 |
| Static Drain-Source On-Resistance (P) | RDS(ON) | | 68 | 77 | mΩ | VGS=-4.5V, ID=-5A | 6 |
| Forward Transconductance (P) | gFS | | 18 | | S | VDS=-5V, ID=-6.5A | 6 |
| Diode Forward Voltage (P) | VSD | | -0.8 | -1 | V | IS=-1A,VGS=0V | 6 |
| Maximum Body-Diode Continuous Current (P) | IS | | | -2.5 | A | | 6 |
| Gate resistance (P) | Rg | 1.5 | 3.2 | 5 | Ω | VGS=0V, VDS=0V, f=1MHz | 6 |
| Total Gate Charge 10V (P) | Qg | | 13.6 | 16 | nC | VGS=10V, VDS=-15V, ID=-6.5A | 6 |
| Total Gate Charge 4.5V (P) | Qg | | 6.7 | 8 | nC | | 6 |
| Body Diode Reverse Recovery Time (P) | trr | | | 15 | ns | IF=-6.5A, dI/dt=100A/µs | 6 |
| Input Capacitance (P) | Ciss | | 760 | | pF | VGS=0V, VDS=-15V, f=1MHz | 6 |
| Output Capacitance (P) | Coss | | 140 | | pF | VGS=0V, VDS=-15V, f=1MHz | 6 |
| Reverse Transfer Capacitance (P) | Crss | | 95 | | pF | VGS=0V, VDS=-15V, f=1MHz | 6 |
| Body Diode Reverse Recovery Charge (P) | Qrr | | 9.7 | | nC | IF=-6.5A, dI/dt=100A/µs | 6 |
## CAD (KiCad official)
- Symbol: `AO4606-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4606-hxy-etched.step` / `ao4606-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4606-hxy.step` / `ao4606-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/ao4606-hxy-datasheet.pdf) (11 pp, sha256 `7e3739b5db87eb12`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ao4606-hxy-datasheet.pdf)