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AO4600-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4600-VB

VBsemi Elec · MOSFETs · SO-8

AO4600-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30 V VDS rating, 8 A package-limited continuous drain current at TC = 25 °C).
2 G1 input Gate of the N-channel MOSFET with a maximum gate-source voltage of ±20 V.
3 S2 passive Source of the P-channel MOSFET (-30 V VDS rating, -8 A package-limited continuous drain current at TC = 25 °C).
4 G2 input Gate of the P-channel MOSFET with a maximum gate-source voltage of ±20 V.
5 D2 passive Drain of the P-channel MOSFET, electrically common with pin 6, with a -30 V drain-source rating and -40 A pulsed drain current.
6 D2 passive Drain of the P-channel MOSFET, electrically common with pin 5, with a -30 V drain-source rating and -40 A pulsed drain current.
7 D1 passive Drain of the N-channel MOSFET, electrically common with pin 8, with a 30 V drain-source rating and 40 A pulsed drain current.
8 D1 passive Drain of the N-channel MOSFET, electrically common with pin 7, with a 30 V drain-source rating and 40 A pulsed drain current.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 30 V TA = 25 °C, N-Channel 1
Drain-Source Voltage (P-Ch) VDS -30 V TA = 25 °C, P-Channel 1
Gate-Source Voltage VGS -20 20 V N and P-Channel 1
Continuous Drain Current (N-Ch) ID 8 A TC = 25 °C, TJ = 150 °C, N-Channel, package limited 1
Continuous Drain Current (P-Ch) ID -8 A TC = 25 °C, TJ = 150 °C, P-Channel, package limited 1
Continuous Drain Current (N-Ch) ID 6.8 A TC = 70 °C, N-Channel 1
Continuous Drain Current (P-Ch) ID -6.8 A TC = 70 °C, P-Channel 1
Continuous Drain Current (P-Ch) ID -6.6 A TA = 25 °C, P-Channel, b, c 1
Continuous Drain Current (N-Ch) ID 5.4 A TA = 70 °C, N-Channel, b, c 1
Continuous Drain Current (P-Ch) ID -5.3 A TA = 70 °C, P-Channel, b, c 1
Pulsed Drain Current (N-Ch) IDM 40 A 10 µs pulse width, N-Channel 1
Pulsed Drain Current (P-Ch) IDM -40 A 10 µs pulse width, P-Channel 1
Source-Drain Diode Current (N-Ch) IS 2.6 A TC = 25 °C, N-Channel 1
Source-Drain Diode Current (P-Ch) IS -2.6 A TC = 25 °C, P-Channel 1
Source-Drain Diode Current (N-Ch) IS 1.6 A TA = 25 °C, N-Channel, b, c 1
Source-Drain Diode Current (P-Ch) IS -1.6 A TA = 25 °C, P-Channel, b, c 1
Pulsed Source-Drain Current (N-Ch) ISM 40 A N-Channel 1
Pulsed Source-Drain Current (P-Ch) ISM -40 A P-Channel 1
Single Pulse Avalanche Current (N-Ch) IAS 10 A L = 0.1 mH, N-Channel 1
Single Pulse Avalanche Current (P-Ch) IAS 20 A L = 0.1 mH, P-Channel 1
Maximum Power Dissipation PD 2 W TA = 25 °C, N and P-Channel, b, c 1
Maximum Power Dissipation PD 1.28 W TA = 70 °C, N and P-Channel, b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance (N-Ch) RthJA 50 62.5 °C/W t ≤ 10 s, N-Channel, b, d 1
Junction-to-Ambient Thermal Resistance (P-Ch) RthJA 47 62.5 °C/W t ≤ 10 s, P-Channel, b, d 1
Junction-to-Foot (Drain) Thermal Resistance (N-Ch) RthJF 30 40 °C/W Steady State, N-Channel 1
Junction-to-Foot (Drain) Thermal Resistance (P-Ch) RthJF 29 38 °C/W Steady State, P-Channel 1
Drain-Source Breakdown Voltage (N-Ch) VDS 30 V VGS = 0 V, ID = 250 µA, N-Ch 2
Drain-Source Breakdown Voltage (P-Ch) VDS -30 V VGS = 0 V, ID = - 250 µA, P-Ch 2
Gate Threshold Voltage (N-Ch) VGS(th) 1 2 V VDS = VGS, ID = 250 µA, N-Ch 2
Gate Threshold Voltage (P-Ch) VGS(th) -1 -2 V VDS = VGS, ID = - 250 µA, P-Ch 2
Gate-Body Leakage (N-Ch) IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V, N-Ch 2
Gate-Body Leakage (P-Ch) IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V, P-Ch 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 1 µA VDS = 30 V, VGS = 0 V, N-Ch 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -1 µA VDS = - 30 V, VGS = 0 V, P-Ch 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Ch 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -10 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C, P-Ch 2
On-State Drain Current (N-Ch) ID(on) 20 A VDS = 5 V, VGS = 10 V, N-Ch 2
On-State Drain Current (P-Ch) ID(on) -20 A VDS = - 5 V, VGS = - 10 V, P-Ch 2
Drain-Source On-State Resistance (P-Ch) RDS(on) 0.04 Ω VGS = - 10 V, ID = - 8 A, P-Ch 2
Drain-Source On-State Resistance (N-Ch) RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A, N-Ch 2
Drain-Source On-State Resistance (P-Ch) RDS(on) 0.044 Ω VGS = - 8 V, ID = - 6.5 A, P-Ch 2
Drain-Source On-State Resistance (N-Ch) RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A, N-Ch 2
Drain-Source On-State Resistance (P-Ch) RDS(on) 0.05 Ω VGS = - 4.5 V, ID = - 5 A, P-Ch 2
Total Gate Charge (P-Ch) Qg 41.5 63 nC VDS = - 20 V, VGS = - 10 V, ID = - 10 A, P-Ch 2
Gate Resistance (P-Ch) Rg 1.2 5.7 9.6 Ω f = 1 MHz, P-Ch 2
Turn-On Delay Time (N-Ch) td(on) 4 8 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω, N-Ch 3
Turn-On Delay Time (P-Ch) td(on) 10 16 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω, P-Ch 3
Rise Time (N-Ch) tr 10 17 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω, N-Ch 3
Rise Time (P-Ch) tr 9 15 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω, P-Ch 3
Fall Time (N-Ch) tf 5 9 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω, N-Ch 3
Fall Time (P-Ch) tf 10 16 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω, P-Ch 3
Body Diode Voltage (N-Ch) VSD 0.81 1.2 V IS = 5.4 A, N-Ch 3
Body Diode Voltage (P-Ch) VSD -0.77 -1.2 V IS = - 2 A, P-Ch 3
Continuous Source-Drain Diode Current (N-Ch) IS 2.6 A TC = 25 °C, N-Ch 3
Continuous Source-Drain Diode Current (P-Ch) IS -2.6 A TC = 25 °C, P-Ch 3
Body Diode Reverse Recovery Time (P-Ch) trr 31 57 ns IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C, P-Ch 3

CAD (KiCad official)

  • Symbol: AO4600-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ao4600-vb-etched.step / ao4600-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4600-vb.step / ao4600-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 6cc136d02eb4ca0b, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF