component
AO4496
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownAO4496
Alpha Omega Semicon · MOSFETs · SOIC-8
AO4496 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, internally tied to pins 2 and 3; body diode anode, VDS max 30V and continuous ID 10A at TA=25°C. |
| 2 | S | passive | Source of the N-channel MOSFET, internally tied to pins 1 and 3; body diode anode, VDS max 30V and continuous ID 10A at TA=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, internally tied to pins 1 and 2; body diode anode, VDS max 30V and continuous ID 10A at TA=25°C. |
| 4 | G | input | Gate of the N-channel MOSFET with VGS maximum ±20V and gate threshold 1.4V min to 2.5V max at ID=250µA. |
| 5 | D | passive | Drain of the N-channel MOSFET, internally tied to pins 6, 7 and 8; VDS max 30V, pulsed drain current 50A. |
| 6 | D | passive | Drain of the N-channel MOSFET, internally tied to pins 5, 7 and 8; VDS max 30V, pulsed drain current 50A. |
| 7 | D | passive | Drain of the N-channel MOSFET, internally tied to pins 5, 6 and 8; VDS max 30V, pulsed drain current 50A. |
| 8 | D | passive | Drain of the N-channel MOSFET, internally tied to pins 5, 6 and 7; VDS max 30V, pulsed drain current 50A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID = 250µA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | TJ = 55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.4 | 1.8 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| On state drain current | ID(ON) | 50 | A | VGS = 10V, VDS = 5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 16 | 19.5 | mΩ | VGS = 10V, ID = 10A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 24 | 29 | mΩ | TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 21 | 26 | mΩ | VGS = 4.5V, ID = 7.5A | 2 | |
| Diode Forward Voltage | VSD | 0.76 | 1 | V | IS = 1A, VGS = 0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 3 | A | 2 | |||
| Input Capacitance | Ciss | 550 | 715 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Gate resistance | Rg | 3 | 4 | 4.9 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg (10V) | 9.8 | 13 | nC | VGS=10V, VDS=15V, ID=10A | 2 | |
| Total Gate Charge (4.5V) | Qg (4.5V) | 4.6 | 6.1 | nC | 2 | ||
| Body Diode Reverse Recovery Time | trr | 22 | 29 | ns | IF=10A, dI/dt=500A/µs | 2 | |
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 10 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 7.5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 50 | A | 1 | |||
| Avalanche Current | IAR | 17 | A | 1 | |||
| Repetitive avalanche energy | EAR | 14 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | 31 | 40 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient (Steady State) | RθJA | 59 | 75 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Lead (Steady State) | RθJL | 16 | 24 | °C/W | Steady State | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | silver | Lead Frame Cu Die Attach Ag epoxy | 9 |
CAD (KiCad official)
- Symbol:
AO4496 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ao4496-etched.step/ao4496-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4496.step/ao4496.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (11 pp, sha256
dd1333e390e7e3d1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).