component
AO4488-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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AO4488-VB
VBsemi Elec · MOSFETs · SO-8
AO4488-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, connected to pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, connected to pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, connected to pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET, with a gate-source voltage limit of ±20 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, connected to pins 6, 7 and 8, with a drain-source voltage of 30 V. |
| 6 | D | passive | Drain of the N-channel MOSFET, connected to pins 5, 7 and 8, with a drain-source voltage of 30 V. |
| 7 | D | passive | Drain of the N-channel MOSFET, connected to pins 5, 6 and 8, with a drain-source voltage of 30 V. |
| 8 | D | passive | Drain of the N-channel MOSFET, connected to pins 5, 6 and 7, with a drain-source voltage of 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 30 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.003 | Ω | VGS = 10 V, ID = 25 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.004 | Ω | VGS = 4.5 V, ID = 22 A | 2 | ||
| Diode Forward Voltage | VSD | 0.72 | 1.1 | V | IS = 2.9 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 45 | 70 | nC | VDS = 15 V, VGS = 4.5 V, ID = 20 A | 2 | |
| Turn-On Delay Time | td(on) | 27 | 40 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 21 | 35 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 107 | 160 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 43 | 65 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 45 | 70 | ns | IF = 2.9 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source Voltage | VDS | 30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 25 | A | TJ = 150 °C, TA = 25 °C, 10 s | 1 | ||
| Continuous Drain Current | ID | 17 | A | TJ = 150 °C, TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current | ID | 20 | A | TJ = 150 °C, TA = 70 °C, 10 s | 1 | ||
| Continuous Drain Current | ID | 13 | A | TJ = 150 °C, TA = 70 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | 70 | A | 10 µs pulse width | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 2.9 | A | TA = 25 °C, 10 s | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 1.3 | A | TA = 25 °C, steady state | 1 | ||
| Avalanche Current | IAS | 50 | A | 1 | |||
| Maximum Power Dissipation | PD | 3.5 | W | TA = 25 °C, 10 s | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation | PD | 2.2 | W | TA = 70 °C, 10 s | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 29 | 35 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 67 | 80 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 13 | 16 | °C/W | Steady state | 1 |
CAD (KiCad official)
- Symbol:
AO4488-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
ao4488-vb-etched.step/ao4488-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4488-vb.step/ao4488-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
ade28687ff4e19ac, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).