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AO4486

Public Made by Adom

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UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4486

UMW · MOSFETs · SOP-8

AO4486 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal of the 100 V N-channel MOSFET (pins 1, 2 and 3 are internally common source); the datasheet gives no pin-specific electrical limit.
2 S passive SOURCE terminal of the 100 V N-channel MOSFET (pins 1, 2 and 3 are internally common source); the datasheet gives no pin-specific electrical limit.
3 S passive SOURCE terminal of the 100 V N-channel MOSFET (pins 1, 2 and 3 are internally common source); the datasheet gives no pin-specific electrical limit.
4 G input GATE terminal; the datasheet specifies a gate-source voltage rating VGS of ±20 V.
5 D passive DRAIN terminal (pins 5 to 8 are internally common drain); the datasheet specifies a drain-source voltage rating VDS of 100 V.
6 D passive DRAIN terminal (pins 5 to 8 are internally common drain); the datasheet specifies a drain-source voltage rating VDS of 100 V.
7 D passive DRAIN terminal (pins 5 to 8 are internally common drain); the datasheet specifies a drain-source voltage rating VDS of 100 V.
8 D passive DRAIN terminal (pins 5 to 8 are internally common drain); the datasheet specifies a drain-source voltage rating VDS of 100 V.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TA=25°C 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 4.2 A TA=25°C 1
Continuous Drain Current ID 3.4 A TA=70°C 1
Pulsed Drain Current IDM 31 A 1
Avalanche Current IAS, IAR 14 A 1
Avalanche energy EAS, EAR 10 mJ L=0.1mH 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 31 40 °C/W t ≤ 10s 2
Maximum Junction-to-Ambient RθJA 59 75 °C/W Steady-State 2
Maximum Junction-to-Lead RθJL 16 24 °C/W 2
Drain-Source Breakdown Voltage BVDSS 100 V ID=250µA, VGS=0V 3
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Zero Gate Voltage Drain Current IDSS 1 5 µA VDS=100V, VGS=0V 3
Static Drain-Source On-Resistance RDS(ON) 79 mΩ VGS=10V, ID=5A 3
Static Drain-Source On-Resistance RDS(ON) 94 mΩ VGS=4.5V, ID=3A 3
Input Capacitance Ciss 778 942 pF VGS=0V, VDS=50V, f=1MHz 3
Output Capacitance Coss 55 81 pF VGS=0V, VDS=50V, f=1MHz 3
Reverse Transfer Capacitance Crss 24 35 pF VGS=0V, VDS=50V, f=1MHz 3

CAD (KiCad official)

  • Symbol: AO4486
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4486-etched.step / ao4486-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4486.step / ao4486.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 c44d13b849322cec, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF