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AO4485

Public Made by Adom

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Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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AO4485

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4485 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, one of three paralleled source pins (S, S, S).
2 S passive Source of the P-channel MOSFET, one of three paralleled source pins (S, S, S).
3 S passive Source of the P-channel MOSFET, one of three paralleled source pins (S, S, S).
4 G input Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20V.
5 D passive Drain of the P-channel MOSFET, one of four shorted drain pins, with a drain-source voltage of -40V and a continuous drain current of -10A steady state at TA=25°C.
6 D passive Drain of the P-channel MOSFET, one of four shorted drain pins, with a drain-source voltage of -40V and a continuous drain current of -10A steady state at TA=25°C.
7 D passive Drain of the P-channel MOSFET, one of four shorted drain pins, with a drain-source voltage of -40V and a continuous drain current of -10A steady state at TA=25°C.
8 D passive Drain of the P-channel MOSFET, one of four shorted drain pins, with a drain-source voltage of -40V and a continuous drain current of -10A steady state at TA=25°C.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, TA=25°C ID -12 A t ≤ 10s 1
Continuous Drain Current, TA=25°C ID -10 A Steady State 1
Continuous Drain Current, TA=70°C ID -9 A t ≤ 10s 1
Continuous Drain Current, TA=70°C ID -8 A Steady State 1
Pulsed Drain Current IDM -120 A 1
Avalanche Current IAR -28 A 1
Repetitive avalanche energy EAR 118 mJ L=0.3mH 1
Power Dissipation, TA=25°C PD 3.1 W t ≤ 10s 1
Power Dissipation, TA=25°C PD 2 W Steady State 1
Power Dissipation, TA=70°C PD 1.7 W t ≤ 10s 1
Power Dissipation, TA=70°C PD 1.1 W Steady State 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS -40 V ID = -250µA, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -40V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS -5 µA TJ = 55°C 2
Gate-Body leakage current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Gate Threshold Voltage VGS(th) -1.7 -1.9 -2.5 V VDS = VGS, ID = -250µA 2
On state drain current ID(ON) -120 A VGS = -10V, VDS = -5V 2
Static Drain-Source On-Resistance RDS(ON) 12.5 15 mΩ VGS = -10V, ID = -10A 2
Static Drain-Source On-Resistance RDS(ON) 19 23 mΩ TJ = 125°C 2
Static Drain-Source On-Resistance RDS(ON) 16 20 mΩ VGS = -4.5V, ID = -8A 2
Diode Forward Voltage VSD -0.7 -1 V IS = -1A, VGS = 0V 2
Maximum Body-Diode Continuous Current IS -3 A 2
Input Capacitance Ciss 2500 3000 pF VGS=0V, VDS=-20V, f=1MHz 2
Gate resistance Rg 2.5 4 6 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 42 55 nC VGS=-10V, VDS=-20V, ID=-10A 2
Body Diode Reverse Recovery Time trr 38 49 ns IF=-10A, dI/dt=100A/µs 2
Maximum Junction-to-Ambient, t ≤ 10s RθJA 31 40 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient, Steady State RθJA 59 75 °C/W Steady State 1
Maximum Junction-to-Lead, Steady State RθJL 16 24 °C/W Steady State 1
Output Capacitance Coss 260 pF VGS=0V, VDS=-20V, f=1MHz 2
Reverse Transfer Capacitance Crss 180 pF VGS=0V, VDS=-20V, f=1MHz 2
Total Gate Charge (4.5V) Qg 18.6 nC 2
Gate Source Charge Qgs 7 nC 2
Gate Drain Charge Qgd 8.6 nC 2
Forward Transconductance gFS 25 S VDS = -5V, ID = -10A 2
Turn-On DelayTime tD(on) 9.4 ns VGS=-10V, VDS=-20V, RL= 2Ω, RGEN=3Ω 2
Turn-On Rise Time tr 20 ns VGS=-10V, VDS=-20V, RL= 2Ω, RGEN=3Ω 2
Turn-Off DelayTime tD(off) 55 ns VGS=-10V, VDS=-20V, RL= 2Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 30 ns VGS=-10V, VDS=-20V, RL= 2Ω, RGEN=3Ω 2
Body Diode Reverse Recovery Charge Qrr 47 nC IF=-10A, dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: AO4485
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4485-etched.step / ao4485-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4485.step / ao4485.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (4 pp, sha256 6b2dbb13d4a153a4, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF