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AO4480

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4480 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, shown on the SOIC-8 top view, with the pin-1 dot at this end.
2 S passive Source of the N-channel MOSFET, shown on the SOIC-8 top view.
3 S passive Source of the N-channel MOSFET, shown on the SOIC-8 top view.
4 G input Gate, ESD protected (4KV HBM), with a maximum gate-source voltage of ±20V.
5 D passive Drain, rated for VDS 40V and 14A continuous at TA=25°C.
6 D passive Drain, rated for VDS 40V and 14A continuous at TA=25°C.
7 D passive Drain, rated for VDS 40V and 14A continuous at TA=25°C.
8 D passive Drain, rated for VDS 40V and 14A continuous at TA=25°C.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Continuous Drain Current IDSM 14 A TA=25°C 1
Continuous Drain Current 11 A TA=70°C 1
Pulsed Drain Current IDM 70 A 1
Avalanche Current IAR 30 A 1
Repetitive Avalanche Energy EAR 135 mJ 0.3mH 1
Maximum Junction-to-Ambian t≤10s RθJA 30 40 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient Steady-State RθJA 59 75 °C/W Steady-State 1
Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS 40 V ID=250uA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=32V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 uA VDS=32V, VGS=0V, TJ=55°C 2
Gate-Body leakage current IGSS -100 100 µA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 2 3 V VDS=VGS ID=250µA 2
On state drain current ID(ON) 70 A VGS=10V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 9 11.5 mΩ VGS=10V, ID=14A 2
Static Drain-Source On-Resistance RDS(ON) 13 mΩ VGS=10V, ID=14A, TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 12 15.5 mΩ VGS=4.5V, ID=5A 2
Diode Forward Voltage VSD 0.7 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 4 A 2
Input Capacitance Ciss 1600 1920 pF VGS=0V, VDS=20V, f=1MHz 2

CAD (KiCad official)

  • Symbol: AO4480
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4480-etched.step / ao4480-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4480.step / ao4480.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (4 pp, sha256 396623e3868f3183, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF