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AO4466-HXY

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HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO4466-HXY

HXY MOSFET · MOSFETs · SOP-8

AO4466-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, shared with pins 2 and 3.
2 S passive Source of the N-channel MOSFET, shared with pins 1 and 3.
3 S passive Source of the N-channel MOSFET, shared with pins 1 and 2.
4 G input Gate of the N-channel MOSFET, with an absolute maximum gate-source voltage of ±20V.
5 D passive Drain of the N-channel MOSFET, shared with pins 6, 7 and 8.
6 D passive Drain of the N-channel MOSFET, shared with pins 5, 7 and 8.
7 D passive Drain of the N-channel MOSFET, shared with pins 5, 6 and 8.
8 D passive Drain of the N-channel MOSFET, shared with pins 5, 6 and 7, rated for 30V drain-source voltage.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 14 18 mΩ VGS=10V, ID=7A 2
Static Drain-Source On-Resistance RDS(ON) 20 26 mΩ VGS=4.5V, ID=4A 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 1.04 2.1 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 6 8.4 nC VDS=15V, VGS=4.5V, ID=7A 2
Gate-Source Charge Qgs 2.2 3.1 nC VDS=15V, VGS=4.5V, ID=7A 2
Gate-Drain Charge Qgd 2 2.8 nC VDS=15V, VGS=4.5V, ID=7A 2
Turn-On Delay Time Td(on) 1.2 2.4 ns VDD=15V, VGS=10V, RG=3.3, ID=7A 2
Rise Time Tr 40 72 ns VDD=15V, VGS=10V, RG=3.3, ID=7A 2
Turn-Off Delay Time Td(off) 18 36 ns VDD=15V, VGS=10V, RG=3.3, ID=7A 2
Fall Time Tf 7.2 14.4 ns VDD=15V, VGS=10V, RG=3.3, ID=7A 2
Input Capacitance Ciss 583 816.2 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 77 107.8 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 59 82.6 pF VDS=15V, VGS=0V, f=1MHz 2
Continuous Source Current IS 7 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 35 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 8.5 A TA=25℃ 1
Continuous Drain Current ID 5.6 A TA=70℃ 1
Pulsed Drain Current IDM 35 A 1
Single Pulse Avalanche Energy EAS 20 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=20A (note 3) 1
Avalanche Current IAS 20 A 1
Total Power Dissipation PD 1.5 W TA=25℃ (note 4) 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 85 ℃/W t≤10s 1
Thermal Resistance Junction-ambient RθJA 25 ℃/W 1

CAD (KiCad official)

  • Symbol: AO4466-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4466-hxy-etched.step / ao4466-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4466-hxy.step / ao4466-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 0ecc47dd7d212e68, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF