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AO4447A

UMW · MOSFETs · SOP-8

AO4447A from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the -30 V P-channel MOSFET, rated with the absolute maximum VDS of -30 V and VGS of ±20 V.
2 S passive Source terminal of the -30 V P-channel MOSFET, rated with the absolute maximum VDS of -30 V and VGS of ±20 V.
3 S passive Source terminal of the -30 V P-channel MOSFET, rated with the absolute maximum VDS of -30 V and VGS of ±20 V.
4 G input Gate terminal of the MOSFET; the absolute maximum gate-source voltage is ±20 V (VGS).
5 D passive Drain terminal of the MOSFET; the absolute maximum drain-source voltage is -30 V and continuous drain current is -18.5 A at TA = 25°C.
6 D passive Drain terminal of the MOSFET; the absolute maximum drain-source voltage is -30 V and continuous drain current is -18.5 A at TA = 25°C.
7 D passive Drain terminal of the MOSFET; the absolute maximum drain-source voltage is -30 V and continuous drain current is -18.5 A at TA = 25°C.
8 D passive Drain terminal of the MOSFET; the absolute maximum drain-source voltage is -30 V and continuous drain current is -18.5 A at TA = 25°C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -18.5 A TA=25°C 1
Continuous Drain Current ID -14.5 A TA=70°C 1
Pulsed Drain Current IDM -74 A 1
Avalanche Current IAS 54 A 1
Avalanche Energy EAS 146 mJ L=0.1mH 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 31 40 °C/W t ≤ 10s 2
Maximum Junction-to-Ambient RθJA 59 75 °C/W Steady-State 2
Maximum Junction-to-Lead RθJL 16 24 °C/W 2
Drain-Source Breakdown Voltage BVDSS -30 V ID=-250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) -1.2 -1.7 -2.2 V VDS=VGS, ID=-250μA 3
Static Drain-Source On-Resistance RDS(ON) 4.7 5.8 mΩ VGS=-10V, ID=-18.5A 3
Static Drain-Source On-Resistance RDS(ON) 6.3 8.2 mΩ VGS=-4.5V, ID=-16A 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-30V, VGS=0V 3
Zero Gate Voltage Drain Current (TJ=55°C) IDSS -5 µA VDS=-30V, VGS=0V, TJ=55°C 3
Gate-Body leakage current IGSS -10 10 µA VDS=0V, VGS=±16V 3
Diode Forward Voltage VSD -0.66 -1 V IS=-1A, VGS=0V 3
Maximum Body-Diode Continuous Current IS -4 A 3

CAD (KiCad official)

  • Symbol: AO4447A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4447a-etched.step / ao4447a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4447a.step / ao4447a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 c0a2ae115a3c80a7, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF