component
AO4447A
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
ao4447a: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
2 files changed
+301−1
README.md+29@@ -26,6 +26,35 @@ AO4447A from UMW, in a SOP-8. Pinout and pin descriptions extracted from the man | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | -30 | | | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | -18.5 | | | A | TA=25°C | 1 |+| Continuous Drain Current | ID | -14.5 | | | A | TA=70°C | 1 |+| Pulsed Drain Current | IDM | -74 | | | A | | 1 |+| Avalanche Current | IAS | | | 54 | A | | 1 |+| Avalanche Energy | EAS | | | 146 | mJ | L=0.1mH | 1 |+| Power Dissipation | PD | | | 3.1 | W | TA=25°C | 1 |+| Power Dissipation | PD | | | 2 | W | TA=70°C | 1 |+| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient | RθJA | | 31 | 40 | °C/W | t ≤ 10s | 2 |+| Maximum Junction-to-Ambient | RθJA | | 59 | 75 | °C/W | Steady-State | 2 |+| Maximum Junction-to-Lead | RθJL | | 16 | 24 | °C/W | | 2 |+| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | ID=-250µA, VGS=0V | 3 |+| Gate Threshold Voltage | VGS(th) | -1.2 | -1.7 | -2.2 | V | VDS=VGS, ID=-250μA | 3 |+| Static Drain-Source On-Resistance | RDS(ON) | | 4.7 | 5.8 | mΩ | VGS=-10V, ID=-18.5A | 3 |+| Static Drain-Source On-Resistance | RDS(ON) | | 6.3 | 8.2 | mΩ | VGS=-4.5V, ID=-16A | 3 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS=-30V, VGS=0V | 3 |+| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | | | -5 | µA | VDS=-30V, VGS=0V, TJ=55°C | 3 |+| Gate-Body leakage current | IGSS | -10 | | 10 | µA | VDS=0V, VGS=±16V | 3 |+| Diode Forward Voltage | VSD | | -0.66 | -1 | V | IS=-1A, VGS=0V | 3 |+| Maximum Body-Diode Continuous Current | IS | | | -4 | A | | 3 |+ ## CAD (KiCad official) - Symbol: `AO4447A`
page.json+272−1@@ -179,6 +179,277 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "c0a2ae115a3c80a7",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -18.5,+ "typ": null,+ "max": null,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -14.5,+ "typ": null,+ "max": null,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -74,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 54,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 146,+ "conditions": "L=0.1mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.1,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 31,+ "max": 40,+ "conditions": "t ≤ 10s",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 59,+ "max": 75,+ "conditions": "Steady-State",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Lead",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 16,+ "max": 24,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "ID=-250µA, VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1.2,+ "typ": -1.7,+ "max": -2.2,+ "conditions": "VDS=VGS, ID=-250μA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 4.7,+ "max": 5.8,+ "conditions": "VGS=-10V, ID=-18.5A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 6.3,+ "max": 8.2,+ "conditions": "VGS=-4.5V, ID=-16A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-30V, VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current (TJ=55°C)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "VDS=-30V, VGS=0V, TJ=55°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VDS=0V, VGS=±16V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.66,+ "max": -1,+ "conditions": "IS=-1A, VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -4,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -220,4 +491,4 @@ "visibility": { "public": true }-}+}