component
AO4443
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
ao4443: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -26,6 +26,30 @@ AO4443 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manu | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | ID=-250µA, VGS=0V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | uA | VDS=-32V, VGS=0V | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | -2 | -3 | V | VDS=VGS, ID=-250μA | 2 |+| Drain-Source On-State Resistance (VGS=-10V) | RDS(ON) | | | 22 | mΩ | VGS=-10V, ID=-6A | 2 |+| Drain-Source On-State Resistance (VGS=-4.5V) | RDS(ON) | | | 25 | mΩ | VGS=-4.5V, ID=-5A | 2 |+| Source-Drain Current (Body Diode) | ISD | | | -20 | A | | 2 |+| Forward on Voltage | VSD | | | -1.2 | V | IS=-20A, VGS=0V | 2 |+| Drain-Source Voltage | VDS | | | -40 | V | VGS=0V | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | VDS=0V | 1 |+| Drain Current-Continuous | ID | | | -8 | A | TC=25°C | 1 |+| Drain Current-Continuous | ID | | | -5 | A | TC=100°C | 1 |+| Drain Current-Pulsed | IDM(pluse) | | | -20 | A | Note 1: pulse width limited by maximum junction temperature | 1 |+| Maximum Power Dissipation | PD | | | 3.8 | W | TC=25°C | 1 |+| Maximum Power Dissipation | PD | | | 1.9 | W | TC=100°C | 1 |+| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Thermal Resistance, Junction-to-Case | RthJC | | 4 | | °C/W | Junction-to-Case | 1 |+ ## CAD (KiCad official) - Symbol: `AO4443`
page.json+212−1@@ -179,6 +179,217 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "45fe9a7121093a29",+ "rows": [+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -40,+ "typ": null,+ "max": null,+ "conditions": "ID=-250µA, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-32V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -2,+ "max": -3,+ "conditions": "VDS=VGS, ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (VGS=-10V)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 22,+ "conditions": "VGS=-10V, ID=-6A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance (VGS=-4.5V)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "VGS=-4.5V, ID=-5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Source-Drain Current (Body Diode)",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward on Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "IS=-20A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -40,+ "conditions": "VGS=0V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "VDS=0V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -8,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "TC=100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Pulsed",+ "symbol": "IDM(pluse)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -20,+ "conditions": "Note 1: pulse width limited by maximum junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.8,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.9,+ "conditions": "TC=100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 4,+ "max": null,+ "conditions": "Junction-to-Case",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -220,4 +431,4 @@ "visibility": { "public": true }-}+}