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Ray ao4441: specified limits as data (metadata.characteristics, 24 rows from the datasheet) 88814a6 16d ago

AO4441

UMW · MOSFETs · SOP-8

AO4441 from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive SOURCE terminal; pins 1, 2 and 3 are all SOURCE and the device is rated for VDS = -60V with a gate-source voltage of ±20V.
2 S passive SOURCE terminal; pins 1, 2 and 3 are all SOURCE and the device is rated for VDS = -60V with a gate-source voltage of ±20V.
3 S passive SOURCE terminal; pins 1, 2 and 3 are all SOURCE and the device is rated for VDS = -60V with a gate-source voltage of ±20V.
4 G input GATE terminal; gate-source voltage is limited to ±20V and the gate threshold voltage VGS(th) is specified between -1V and -3V.
5 D passive DRAIN terminal; pins 5 to 8 are all DRAIN, rated for VDS = -60V and continuous drain current -4A at TA=25°C (-3.1A at TA=70°C).
6 D passive DRAIN terminal; pins 5 to 8 are all DRAIN, rated for VDS = -60V and continuous drain current -4A at TA=25°C (-3.1A at TA=70°C).
7 D passive DRAIN terminal; pins 5 to 8 are all DRAIN, rated for VDS = -60V and continuous drain current -4A at TA=25°C (-3.1A at TA=70°C).
8 D passive DRAIN terminal; pins 5 to 8 are all DRAIN, rated for VDS = -60V and continuous drain current -4A at TA=25°C (-3.1A at TA=70°C).

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -60 V ID=-250µA, VGS=0V 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-48V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS -5 µA VDS=-48V, VGS=0V, TJ=55°C 3
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(th) -1 -2.1 -3 V VDS=VGS, ID=-250μA 3
Static Drain-Source On-Resistance RDS(ON) 80 100 mΩ VGS=-10V, ID=-4A 3
Static Drain-Source On-Resistance RDS(ON) 102 130 mΩ VGS=-4.5V, ID=-3A 3
Diode Forward Voltage VSD -0.77 -1 V IS=-1A, VGS=0V 3
Maximum Body-Diode Continuous Current IS -4 A 3
Input Capacitance Ciss 930 1120 pF VGS=0V, VDS=-30V, f=1MHz 3
Gate resistance Rg 7.2 9 Ω f=1MHz 3
Total Gate Charge (10V) Qg(10V) 16 20 nC VGS=-10V, VDS=-30V, ID=-4A 3
Total Gate Charge (4.5V) Qg(4.5V) 8 10 nC 3
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -4 A TA=25°C 1
Continuous Drain Current ID -3.1 A TA=70°C 1
Pulsed Drain Current IDM -20 A 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient (t ≤ 10s) RθJA 24 40 °C/W t ≤ 10s 2
Maximum Junction-to-Ambient (Steady-State) RθJA 54 75 °C/W Steady-State 2
Maximum Junction-to-Lead RθJL 21 30 °C/W Steady-State 2

CAD (KiCad official)

  • Symbol: AO4441
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4441-etched.step / ao4441-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4441.step / ao4441.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 2c5de7f22797a9e5, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF