component

AO4437-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsao4437-vbfactory-2.0.0extractor-text

Verified AO4437-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AO4437-VB · SOP-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-tjx7p68e/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ao4437-vb.kicad_sym✓ ao4437-vb.kicad_mod✓ ao4437-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers ao4437-vb: viewers · Ray 4d ago
ao4437-vb-etched.glb Publish 0.1.0 · Ray 4d ago
ao4437-vb-etched.step ao4437-vb: factory component page (tier=lcsc) · Ray 4d ago
ao4437-vb-hero.glb ao4437-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
ao4437-vb-hero.overlay.json Publish 0.1.0 · Ray 4d ago
ao4437-vb.glb Publish 0.1.0 · Ray 4d ago
ao4437-vb.kicad_mod Publish 0.1.0 · Ray 4d ago
ao4437-vb.kicad_sym Publish 0.1.0 · Ray 4d ago
ao4437-vb.lbr Publish 0.1.0 · Ray 4d ago
ao4437-vb.step Publish 0.1.0 · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 4d ago

AO4437-VB

VBsemi Elec · MOSFETs · SOP-8

AO4437-VB from VBsemi Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the source-drain body diode is rated for a continuous current of -6 A at TC = 25 °C.
2 S passive Source terminal of the P-channel MOSFET; the source-drain body diode is rated for a continuous current of -6 A at TC = 25 °C.
3 S passive Source terminal of the P-channel MOSFET; the source-drain body diode is rated for a continuous current of -6 A at TC = 25 °C.
4 G input Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±12 V.
5 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -20 V.
6 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -20 V.
7 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -20 V.
8 D passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -20 V.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOP-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -13 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -10 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID -8 A TA = 25 °C 1
Pulsed Drain Current IDM -50 A 1
Continuous Source-Drain Diode Current IS -6 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2.9 A TA = 25 °C 1
Maximum Power Dissipation PD 19 W TC = 25 °C 1
Maximum Power Dissipation PD 12 W TC = 70 °C 1
Maximum Power Dissipation PD 3.5 W TA = 25 °C 1
Maximum Power Dissipation PD 2.2 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C Peak temperature (notes d, e) 1
Maximum Junction-to-Ambient, t ≤ 5 s RthJA 28 36 °C/W t ≤ 5 s 1
Maximum Junction-to-Case (Drain), Steady State RthJC 5.3 6.5 °C/W Steady state 1
Maximum Junction-to-Ambient, Steady State RthJA 80 °C/W Steady state (note e) 1
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -1.2 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -20 20 µA VDS = 0 V, VGS = ±12 V 2
Gate-Source Leakage IGSS -0.5 0.5 µA VDS = 0 V, VGS = ±4.5 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -20 A VDS ≤ -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.015 Ω VGS = -4.5 V, ID = -5.6 A 2
Drain-Source On-State Resistance RDS(on) 0.021 Ω VGS = -2.5 V, ID = -5.3 A 2
Drain-Source On-State Resistance RDS(on) 0.04 Ω VGS = -1.8 V, ID = -2.5 A 2
Total Gate Charge Qg 50 75 nC VDS = -10 V, VGS = -8 V, ID = -5 A 2
Total Gate Charge Qg 20 30 nC VDS = -10 V, VGS = -4.5 V, ID = -5 A 2
Gate Resistance Rg 0.2 1 2 kΩ f = 1 MHz 2
Turn-On Delay Time td(on) 0.71 1.1 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise Time tr 1.7 2.6 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall Time tf 3.2 5 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 0.3 0.45 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 0.6 0.9 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 10 15 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 3.5 5.5 us VDD = -10 V, RL = 1 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -6 A TC = 25 °C 2
Pulse Diode Forward Current ISM -50 A 2
Body Diode Voltage VSD -0.85 -1.2 V IS = -5 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 30 60 ns IF = 6 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 20 40 nC IF = 6 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Forward Transconductance gfs 35 S VDS = -10 V, ID = -5.6 A 2
VDS Temperature Coefficient ΔVDS/TJ -12 mV/°C ID = -250 µA 2

CAD (KiCad official)

  • Symbol: AO4437-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4437-vb-etched.step / ao4437-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4437-vb.step / ao4437-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 ea63e887f3a7b249, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF