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Contents

README

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AO4421

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4421 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, one of three parallel source pins; drain-source voltage rated -60V.
2 S passive Source of the P-channel MOSFET, one of three parallel source pins; continuous drain current -6.2A at TA=25°C.
3 S passive Source of the P-channel MOSFET, one of three parallel source pins; body diode continuous current 4.2A max.
4 G input Gate of the P-channel MOSFET; gate-source voltage limited to ±20V, threshold -1V to -3V at ID=-250µA.
5 D passive Drain of the P-channel MOSFET, one of four parallel drain pins; drain-source voltage rated -60V.
6 D passive Drain of the P-channel MOSFET, one of four parallel drain pins; pulsed drain current -40A max.
7 D passive Drain of the P-channel MOSFET, one of four parallel drain pins; RDS(ON) under 40mΩ at VGS=-10V.
8 D passive Drain of the P-channel MOSFET, one of four parallel drain pins; RDS(ON) under 50mΩ at VGS=-4.5V.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
BVDSS Drain-Source Breakdown Voltage BVDSS -60 V ID=-250µA, VGS=0V 2
Zero Gate Voltage Drain Current (TJ=25°C) IDSS -1 µA VDS=-48V, VGS=0V 2
Zero Gate Voltage Drain Current (TJ=55°C) IDSS -5 µA VDS=-48V, VGS=0V, TJ=55°C 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) -1 -2 -3 V VDS=VGS, ID=-250µA 2
On state drain current ID(ON) -40 A VGS=-10V, VDS=-5V 2
Static Drain-Source On-Resistance RDS(ON) 32 40 mΩ VGS=-10V, ID=-6.2A 2
Static Drain-Source On-Resistance (TJ=125°C) RDS(ON) 53 70 mΩ VGS=-10V, ID=-6.2A, TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 40 50 mΩ VGS=-4.5V, ID=-5A 2
Diode Forward Voltage VSD -0.74 -1 V IS=-1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS -4.2 A 2
Input Capacitance Ciss 2417 2900 pF VGS=0V, VDS=-30V, f=1MHz 2
Gate resistance Rg 1.9 2.3 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge (10V) Qg 46.5 55 nC VGS=-10V, VDS=-30V, ID=-6.2A 2
Body Diode Reverse Recovery Time trr 34 42 ns IF=-6.2A, dI/dt=100A/µs 2
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -6.2 A TA=25°C 1
Continuous Drain Current ID -5 A TA=70°C 1
Pulsed Drain Current IDM -40 A 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient (t ≤ 10s) RθJA 24 40 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient (Steady-State) RθJA 54 75 °C/W Steady-State 1
Maximum Junction-to-Lead (Steady-State) RθJL 21 30 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AO4421
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4421-etched.step / ao4421-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4421.step / ao4421.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (4 pp, sha256 8ba23a9b5c529b1c, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF