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AO4409-MS

MSKSEMI · MOSFETs · SOP-8

AO4409-MS from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (VDS = -30V, ID = -15A at VGS = 10V), tied with the other source pins.
2 S passive Source of the P-channel MOSFET (VDS = -30V, ID = -15A at VGS = 10V), tied with the other source pins.
3 S passive Source of the P-channel MOSFET (VDS = -30V, ID = -15A at VGS = 10V), tied with the other source pins.
4 G input Gate of the P-channel MOSFET with VGS rated ±20V and threshold of -1.4V min to -2.7V max at ID = -250 μA.
5 D passive Drain of the P-channel MOSFET (VDS = -30V, pulsed ID -80A), tied with the other drain pins.
6 D passive Drain of the P-channel MOSFET (VDS = -30V, pulsed ID -80A), tied with the other drain pins.
7 D passive Drain of the P-channel MOSFET (VDS = -30V, pulsed ID -80A), tied with the other drain pins.
8 D passive Drain of the P-channel MOSFET (VDS = -30V, pulsed ID -80A), tied with the other drain pins.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID -15 A TA=25°C 2
Continuous Drain Current ID -12.8 A TA=70°C 2
Pulsed Drain Current IDM -80 A 2
Avalanche Current IAS,IAR 30 A 2
Avalanche energy EAS,EAR 135 mJ L=0.1mH 2
Power Dissipation PD 3.1 W TA=25°C 2
Power Dissipation PD 2 W TA=70°C 2
Junction Temperature TJ 150 ℃ 2
Junction Storage Temperature Range Tstg -55 150 ℃ 2
Thermal Resistance Junction-to-Ambient RthJA 40 ℃/W t ≤ 10s 2
Thermal Resistance Junction-to-Ambient RthJA 75 ℃/W Steady-State 2
Thermal Resistance Junction-to-Lead RthJL 24 ℃/W 2
Drain-Source Breakdown Voltage VDSS -30 V ID=-250 μA, VGS=0V 3
Zero Gate Voltage Drain Current IDSS -5 uA VDS=-30V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS -25 uA VDS=-30V, VGS=0V, TJ=55℃ 3
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(th) -1.4 -2.7 V VDS=VGS, ID=-250 μA 3
Static Drain-Source On-Resistance RDS(On) 7.5 mΩ VGS=-10V, ID=-15A 3
Static Drain-Source On-Resistance RDS(On) 11.5 mΩ VGS=-10V, ID=-15A, TJ=125℃ 3
Static Drain-Source On-Resistance RDS(On) 12 mΩ VGS=-4.5V, ID=-10A 3
On state drain current ID(ON) -80 A VGS=-10V, VDS=-5V 3
Forward Transconductance gFS 35 50 S VDS=-5V, ID=-15A 3
Input Capacitance Ciss 5270 6400 pF VGS=0V, VDS=-15V, f=1MHz 3
Gate resistance Rg 2 3 Ω VGS=0V, VDS=0V, f=1MHz 3
Total Gate Charge (10V) Qg 100 120 nC VGS=-10V, VDS=-15V, ID=-15A 3
Body Diode Reverse Recovery Time trr 36.7 45 ns IF=-15A, dI/dt=100A/us 3
Maximum Body-Diode Continuous Current IS -5 A 3
Diode Forward Voltage VSD -1 V IS=-1A, VGS=0V 3

CAD (KiCad official)

  • Symbol: AO4409-MS
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ao4409-ms-etched.step / ao4409-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4409-ms.step / ao4409-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 e26e907c70dec0a4, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF