component
AO4409-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 14d ago |
| viewers | 14d ago |
| ao4409-hxy-etched.glb | 14d ago |
| ao4409-hxy-etched.step | 14d ago |
| ao4409-hxy-hero.glb | 14d ago |
| ao4409-hxy-hero.overlay.json | 14d ago |
| ao4409-hxy.glb | 14d ago |
| ao4409-hxy.kicad_mod | 14d ago |
| ao4409-hxy.kicad_sym | 14d ago |
| ao4409-hxy.lbr | 14d ago |
| ao4409-hxy.step | 14d ago |
| package.json | 14d ago |
| page.json | 14d ago |
| README.md | 14d ago |
AO4409-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4409-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; pin 1 is on the side with the package marking dot, and the datasheet shows S, S, S, G on this side. |
| 2 | S | passive | Source of the P-channel MOSFET, connected in parallel with the other source pins. |
| 3 | S | passive | Source of the P-channel MOSFET, connected in parallel with the other source pins. |
| 4 | G | input | Gate of the P-channel MOSFET; the absolute maximum gate-source voltage is ±20V and the threshold VGS(th) is -1.2V to -2.5V. |
| 5 | D | passive | Drain of the P-channel MOSFET, rated for VDS of -30V and continuous ID of -15A at TA=25°C. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected in parallel with the other drain pins. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected in parallel with the other drain pins. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected in parallel with the other drain pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 5.8 | 8.7 | mΩ | VGS=-10V, ID=-12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.5 | 13.5 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -14 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -56 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -15 | A | TA=25℃, VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -11 | A | TA=70℃, VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -56 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 151 | mJ | 1 | |||
| Avalanche Current | IAS | -55 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.5 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient (t≦10s) | RθJA | 40 | ℃/W | t≦10s | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 75 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 24 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
AO4409-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4409-hxy-etched.step/ao4409-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4409-hxy.step/ao4409-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
c7ca230d0a49dba0, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).