# AO4407-HXY

**HXY MOSFET** · MOSFETs · SOP-8

AO4407-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied with pins 2 and 3 (VDS = -30V, ID = -12A device). |
| 2 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET, with absolute maximum VGS of ±20V and threshold VGS(th) of -1.0V to -2.5V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied with pins 6, 7 and 8 (VDS max -30V, RDS(on) < 15mΩ at VGS = -10V). |
| 6 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied with pins 5, 6 and 7. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage | VGS |  |  | 20 | V |  | 1 |
| Drain Current | ID@TA |  |  | -12 | A | TA=25°C, VGS @ 10V | 1 |
| Drain Current | ID@TA |  |  | -9.1 | A | TA=70°C, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | -40 | A |  | 1 |
| Total Power Dissipation | PD@TA=25°C |  |  | 2.5 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | °C |  | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a |  |  | 50 | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 |  |  | V | VGS=0V, ID= -250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS= -30V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS= ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS=VGS, ID= -250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 10 | 15 | mΩ | VGS= -10V, ID= -10A | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 17 | 24 | mΩ | VGS= -4.5V, ID= -5A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | -12 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | -60 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  | -0.8 | -1.2 | V | VGS=0V, IS= -15A | 2 |

## CAD (KiCad official)

- Symbol: `AO4407-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4407-hxy-etched.step` / `ao4407-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4407-hxy.step` / `ao4407-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757958817395159040) (7 pp, sha256 `8142a3e2308cae09`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4407-hxy-datasheet.pdf)