Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

AO4404B

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4404B from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET (pin 1 is the dot-marked corner on the source side of the package).
2 S passive Source of the N-channel MOSFET, tied to the other source pins.
3 S passive Source of the N-channel MOSFET, tied to the other source pins.
4 G input Gate; the part is driven with VGS up to ±12V (absolute maximum) and works with gate voltages as low as 2.5V.
5 D passive Drain of the N-channel MOSFET (VDS 30V maximum), tied to the other drain pins.
6 D passive Drain of the N-channel MOSFET (VDS 30V maximum), tied to the other drain pins.
7 D passive Drain of the N-channel MOSFET (VDS 30V maximum), tied to the other drain pins.
8 D passive Drain of the N-channel MOSFET (VDS 30V maximum), tied to the other drain pins.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=30V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA TJ=55°C 2
Gate-Body leakage current IGSS 100 nA VDS=0V, VGS=±12V 2
Gate Threshold Voltage VGS(th) 0.65 1.05 1.45 V VDS=VGS ID=250µA 2
On state drain current ID(ON) 60 A VGS=4.5V, VDS=5V 2
Static Drain-Source On-Resistance RDS(ON) 17.7 24 mΩ VGS=10V, ID=8.5A 2
Static Drain-Source On-Resistance RDS(ON) 28 34 mΩ TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 19 30 mΩ VGS=4.5V, ID=8.5A 2
Static Drain-Source On-Resistance RDS(ON) 24 48 mΩ VGS=2.5V, ID=5A 2
Diode Forward Voltage VSD 0.7 1 V IS=1A,VGS=0V 2
Maximum Body-Diode Continuous Current IS 4 A 2
Gate resistance Rg 1.5 3 4.5 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg 6 7 nC VGS=4.5V, VDS=15V, ID=8.5A 2
Drain-Source Voltage VDS 30 V TA=25°C unless otherwise noted 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 8.5 A TA=25°C 1
Continuous Drain Current ID 7.1 A TA=70°C 1
Pulsed Drain Current IDM 60 A 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient (t ≤ 10s) RθJA 31 40 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient (Steady-State) RθJA 59 75 °C/W Steady-State 1
Maximum Junction-to-Lead (Steady-State) RθJL 16 24 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AO4404B
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4404b-etched.step / ao4404b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4404b.step / ao4404b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 1dc4bedd7e403966, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF