# AO4403-MS

**MSKSEMI** · MOSFETs · SOP-8

AO4403-MS from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, with the body diode continuous current rated at -3.5 A (IS) and the drain current rated at -6 A at TA=25°C. |
| 2 | S | passive | Source of the P-channel MOSFET, with the body diode continuous current rated at -3.5 A (IS) and the drain current rated at -6 A at TA=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, with the body diode continuous current rated at -3.5 A (IS) and the drain current rated at -6 A at TA=25°C. |
| 4 | G | passive | Gate of the P-channel MOSFET, with an absolute maximum gate-source voltage of ±12 V and a threshold of -0.5 V min to -1.3 V max at ID=-250 µA. |
| 5 | D | passive | Drain of the P-channel MOSFET, with an absolute maximum drain-source voltage of -30 V, continuous current of -6 A at TA=25°C and pulsed current of -30 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, with an absolute maximum drain-source voltage of -30 V, continuous current of -6 A at TA=25°C and pulsed current of -30 A. |
| 7 | D | passive | Drain of the P-channel MOSFET, with an absolute maximum drain-source voltage of -30 V, continuous current of -6 A at TA=25°C and pulsed current of -30 A. |
| 8 | D | passive | Drain of the P-channel MOSFET, with an absolute maximum drain-source voltage of -30 V, continuous current of -6 A at TA=25°C and pulsed current of -30 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V |  | 2 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 2 |
| Continuous Drain Current | ID | -6 |  |  | A | TA=25°C | 2 |
| Continuous Drain Current | ID | -5 |  |  | A | TA=70°C | 2 |
| Pulsed Drain Current | IDM | -30 |  |  | A |  | 2 |
| Avalanche Current | IAS,IAR |  |  | 18 | A |  | 2 |
| Avalanche Energy | EAS,EAR |  |  | 16 | mJ | L=0.1mH | 2 |
| Power Dissipation | PD |  |  | 3.1 | W | TA=25°C | 2 |
| Power Dissipation | PD |  |  | 2 | W | TA=70°C | 2 |
| Thermal Resistance Junction-to-Ambient | RthJA |  | 40 |  | ℃/W | t ≤ 10s | 2 |
| Thermal Resistance Junction-to-Ambient | RthJA |  | 75 |  | ℃/W | Steady-State | 2 |
| Thermal Resistance Junction-to-Lead | RthJL |  | 24 |  | ℃/W |  | 2 |
| Junction Temperature | TJ |  |  | 150 | ℃ |  | 2 |
| Junction Storage Temperature Range | Tstg | -55 |  | 150 | ℃ |  | 2 |
| Drain-Source Breakdown Voltage | VDSS | -30 |  |  | V | ID=-250 μA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-30V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -5 | μA | VDS=-30V, VGS=0V, TJ=55℃ | 3 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±12V | 3 |
| Gate Threshold Voltage | VGS(th) | -0.5 | -1.3 |  | V | VDS=VGS ID=-250 μA | 3 |
| Static Drain-Source On-Resistance | RDS(On) |  |  | 48 | mΩ | VGS=-10V, ID=-6A | 3 |
| Static Drain-Source On-Resistance | RDS(On) |  |  | 72 | mΩ | VGS=-10V, ID=-6A, TJ=125℃ | 3 |
| Static Drain-Source On-Resistance | RDS(On) |  |  | 57 | mΩ | VGS=-4.5V, ID=-4A | 3 |
| Static Drain-Source On-Resistance | RDS(On) |  |  | 80 | mΩ | VGS=-2.5V, ID=-2A | 3 |
| On-State Drain Current | ID(ON) | -30 |  |  | A | VGS=-4.5V, VDS=-5V | 3 |
| Forward Transconductance | gFS |  | 19 |  | S | VDS=-5V, ID=-6A | 3 |
| Input Capacitance | Ciss |  | 645 | 780 | pF | VGS=0V, VDS=-15V, f=1MHz | 3 |
| Output Capacitance | Coss |  | 80 |  | pF |  | 3 |
| Reverse Transfer Capacitance | Crss |  | 55 |  | pF |  | 3 |
| Gate Resistance | Rg |  | 4 | 12 | Ω | VGS=0V, VDS=0V, f=1MHz | 3 |
| Total Gate Charge | Qg |  | 7 |  | nC | VGS=-4.5V, VDS=-15V, ID=-6A | 3 |
| Gate Source Charge | Qgs |  | 1.5 |  | nC |  | 3 |
| Gate Drain Charge | Qgd |  | 2.5 |  | nC |  | 3 |
| Turn-On Delay Time | td(on) |  | 6.5 |  | ns | VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=6Ω | 3 |
| Turn-On Rise Time | tr |  | 3.5 |  | ns |  | 3 |
| Turn-Off Delay Time | td(off) |  | 41 |  | ns |  | 3 |
| Turn-Off Fall Time | tf |  | 9 |  | ns |  | 3 |
| Body Diode Reverse Recovery Time | trr |  | 11 |  | ns | IF=-6A, dI/dt=100A/μs | 3 |
| Body Diode Reverse Recovery Charge | Qrr |  | 3.5 |  | nC |  | 3 |
| Maximum Body-Diode Continuous Current | IS | -3.5 |  |  | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | -1 | V | IS=-1A, VGS=0V | 3 |

## CAD (KiCad official)

- Symbol: `AO4403-MS`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4403-ms-etched.step` / `ao4403-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4403-ms.step` / `ao4403-ms.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MSKSEMI datasheet](docs/ao4403-ms-datasheet.pdf) (7 pp, sha256 `b7933d138009e800`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4403-ms-datasheet.pdf)