component
AO4402G
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
ao4402g: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -26,6 +26,38 @@ AO4402G from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extra | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 20 | V | | 1 |+| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current | ID | | | 20 | A | TA=25°C | 1 |+| Continuous Drain Current | ID | | | 16 | A | TA=70°C | 1 |+| Pulsed Drain Current | IDM | | | 75 | A | | 1 |+| Avalanche Current | IAS | | | 40 | A | | 1 |+| Avalanche energy | EAS | | | 80 | mJ | L=0.1mH | 1 |+| Power Dissipation | PD | | | 3.1 | W | TA=25°C | 1 |+| Power Dissipation | PD | | | 2 | W | TA=70°C | 1 |+| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient | RθJA | | 31 | 40 | °C/W | t ≤ 10s | 1 |+| Maximum Junction-to-Ambient | RθJA | | 59 | 75 | °C/W | Steady-State | 1 |+| Maximum Junction-to-Lead | RθJL | | 16 | 24 | °C/W | Steady-State | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | ID=250μA, VGS=0V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=20V, VGS=0V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 5 | μA | VDS=20V, VGS=0V, TJ=55°C | 2 |+| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 2 |+| Gate Threshold Voltage | VGS(th) | 0.45 | 0.85 | 1.25 | V | VDS=VGS, ID=250mA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 4.9 | 5.9 | mΩ | VGS=4.5V, ID=20A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 6.3 | 7.6 | mΩ | TJ=125°C | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 5.8 | 7.3 | mΩ | VGS=2.5V, ID=18A | 2 |+| Diode Forward Voltage | VSD | | 0.6 | 1 | V | IS=1A, VGS=0V | 2 |+| Maximum Body-Diode Continuous Current | IS | | | 5 | A | | 2 |+| Gate resistance | Rg | 1.2 | 2.4 | 3.6 | Ω | | 2 |+| Total Gate Charge | Qg | | 31 | 45 | nC | VGS=4.5V, VDS=10V, ID=20A | 2 |+ ## CAD (KiCad official) - Symbol: `AO4402G`
page.json+308−1@@ -179,6 +179,313 @@ "Package": "SOIC-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "481ae748e4b36129",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "L=0.1mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.1,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 31,+ "max": 40,+ "conditions": "t ≤ 10s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 59,+ "max": 75,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Lead",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 16,+ "max": 24,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "ID=250μA, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=20V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS=20V, VGS=0V, TJ=55°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±12V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.45,+ "typ": 0.85,+ "max": 1.25,+ "conditions": "VDS=VGS, ID=250mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 4.9,+ "max": 5.9,+ "conditions": "VGS=4.5V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 6.3,+ "max": 7.6,+ "conditions": "TJ=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 5.8,+ "max": 7.3,+ "conditions": "VGS=2.5V, ID=18A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.6,+ "max": 1,+ "conditions": "IS=1A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 1.2,+ "typ": 2.4,+ "max": 3.6,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 31,+ "max": 45,+ "conditions": "VGS=4.5V, VDS=10V, ID=20A",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -220,4 +527,4 @@ "visibility": { "public": true }-}+}