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Contents

README

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AO4402G

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4402G from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the device is rated for VDS of 20V and VGS of ±12V.
2 S passive Source terminal of the N-channel MOSFET; the device is rated for VDS of 20V and VGS of ±12V.
3 S passive Source terminal of the N-channel MOSFET; the device is rated for VDS of 20V and VGS of ±12V.
4 G input Gate terminal of the MOSFET; VGS is rated ±12V and the datasheet gives gate resistance Rg of 1.2 to 3.6 Ω (min to max).
5 D passive Drain terminal of the N-channel MOSFET; the device is rated for ID of 20A at VGS=4.5V.
6 D passive Drain terminal of the N-channel MOSFET; the device is rated for ID of 20A at VGS=4.5V.
7 D passive Drain terminal of the N-channel MOSFET; the device is rated for ID of 20A at VGS=4.5V.
8 D passive Drain terminal of the N-channel MOSFET; the device is rated for ID of 20A at VGS=4.5V.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 20 A TA=25°C 1
Continuous Drain Current ID 16 A TA=70°C 1
Pulsed Drain Current IDM 75 A 1
Avalanche Current IAS 40 A 1
Avalanche energy EAS 80 mJ L=0.1mH 1
Power Dissipation PD 3.1 W TA=25°C 1
Power Dissipation PD 2 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 31 40 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient RθJA 59 75 °C/W Steady-State 1
Maximum Junction-to-Lead RθJL 16 24 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS 20 V ID=250μA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 μA VDS=20V, VGS=0V, TJ=55°C 2
Gate-Body leakage current IGSS -100 100 nA VDS=0V, VGS=±12V 2
Gate Threshold Voltage VGS(th) 0.45 0.85 1.25 V VDS=VGS, ID=250mA 2
Static Drain-Source On-Resistance RDS(ON) 4.9 5.9 mΩ VGS=4.5V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 6.3 7.6 mΩ TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 5.8 7.3 mΩ VGS=2.5V, ID=18A 2
Diode Forward Voltage VSD 0.6 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 5 A 2
Gate resistance Rg 1.2 2.4 3.6 Ω 2
Total Gate Charge Qg 31 45 nC VGS=4.5V, VDS=10V, ID=20A 2

CAD (KiCad official)

  • Symbol: AO4402G
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4402g-etched.step / ao4402g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4402g.step / ao4402g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256 481ae748e4b36129, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF