component
AO4402-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AO4402-HXY
HXY MOSFET · MOSFETs · SOP-8
AO4402-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; tied with pins 2 and 3 (VDS max 20 V, VGS ±12 V). |
| 2 | S | passive | Source of the N-channel MOSFET; tied with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET; tied with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS rated ±12 V, RDS(ON) < 5.5 mΩ at VGS=4.5 V. |
| 5 | D | passive | Drain of the N-channel MOSFET; tied with pins 6, 7 and 8 (VDS 20 V, ID 20 A continuous at TC=25°C). |
| 6 | D | passive | Drain of the N-channel MOSFET; tied with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET; tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET; tied with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current, Continuous | ID | 20 | A | TC=25℃ | 1 | ||
| Drain Current, Continuous | ID | 16 | A | TC=70 ℃ | 1 | ||
| Drain Current, Pulsed | IDM | 140 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 162 | mJ | 1 | |||
| Single Pulse Avalanche Current | IAS | 57 | A | 1 | |||
| Power Dissipation | PD | 3.1 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction to ambient | RθJA | 40 | ℃/W | (SO-8) | 1 | ||
| Drain-Source Breakdown Voltage | VDSS | 20 | V | ID=250 uA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=55℃) | IDSS | 5 | uA | VDS=20V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 1.6 | V | VDS=VGS , ID=250uA | 2 | |
| Static Drain-Source On-Resistance | RDS(On) | 5.5 | mΩ | VGS=4.5V, ID=20A | 2 | ||
| Static Drain-Source On-Resistance | RDS(On) | 7 | mΩ | VGS=4.5V, ID=20A, TJ=125℃ | 2 | ||
| On State Drain Current | ID(ON) | 140 | A | VGS=10V, VDS=5V | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | IS=1A,VGS=0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 4 | A | 2 | |||
| Input Capacitance | Ciss | 3080 | 4630 | pF | VGS=0V, VDS=10V, f=1MHz | 2 | |
| Output Capacitance | Coss | 520 | 960 | pF | VGS=0V, VDS=10V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 350 | 810 | pF | VGS=0V, VDS=10V, f=1MHz | 2 | |
| Gate Resistance | Rg | 0.6 | 2.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | |
| Total Gate Charge | Qg | 28 | 43 | nC | VGS=10V, VDS=10V, ID=20A | 2 | |
| Gate Source Charge | Qgs | 7 | 11 | nC | VGS=10V, VDS=10V, ID=20A | 2 | |
| Gate Drain Charge | Qgd | 7 | 17 | nC | VGS=10V, VDS=10V, ID=20A | 2 | |
| Body Diode Reverse Recovery Time | trr | 13 | 20 | ns | IF= 20A, dI/dt= 500A/us | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 29 | 43 | nC | IF= 20A, dI/dt= 500A/us | 2 | |
| Forward Transconductance | gFS | 105 | S | VDS=5V, ID=20A | 2 | ||
| Turn-On Delay Time | td(on) | 7 | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 8 | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 70 | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 18 | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 |
CAD (KiCad official)
- Symbol:
AO4402-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4402-hxy-etched.step/ao4402-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4402-hxy.step/ao4402-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
ba8853e042c31ddb, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AO4402-HXY
**HXY MOSFET** · MOSFETs · SOP-8
AO4402-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; tied with pins 2 and 3 (VDS max 20 V, VGS ±12 V). |
| 2 | S | passive | Source of the N-channel MOSFET; tied with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET; tied with pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS rated ±12 V, RDS(ON) < 5.5 mΩ at VGS=4.5 V. |
| 5 | D | passive | Drain of the N-channel MOSFET; tied with pins 6, 7 and 8 (VDS 20 V, ID 20 A continuous at TC=25°C). |
| 6 | D | passive | Drain of the N-channel MOSFET; tied with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET; tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET; tied with pins 5, 6 and 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Drain Current, Continuous | ID | | | 20 | A | TC=25℃ | 1 |
| Drain Current, Continuous | ID | | | 16 | A | TC=70 ℃ | 1 |
| Drain Current, Pulsed | IDM | | | 140 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 162 | mJ | | 1 |
| Single Pulse Avalanche Current | IAS | | | 57 | A | | 1 |
| Power Dissipation | PD | | | 3.1 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction to ambient | RθJA | | | 40 | ℃/W | (SO-8) | 1 |
| Drain-Source Breakdown Voltage | VDSS | 20 | | | V | ID=250 uA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TJ=55℃) | IDSS | | | 5 | uA | VDS=20V, VGS=0V, TJ=55℃ | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | | 1.6 | V | VDS=VGS , ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | | 5.5 | mΩ | VGS=4.5V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(On) | | | 7 | mΩ | VGS=4.5V, ID=20A, TJ=125℃ | 2 |
| On State Drain Current | ID(ON) | 140 | | | A | VGS=10V, VDS=5V | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | IS=1A,VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 4 | A | | 2 |
| Input Capacitance | Ciss | | 3080 | 4630 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Output Capacitance | Coss | | 520 | 960 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 350 | 810 | pF | VGS=0V, VDS=10V, f=1MHz | 2 |
| Gate Resistance | Rg | | 0.6 | 2.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | | 28 | 43 | nC | VGS=10V, VDS=10V, ID=20A | 2 |
| Gate Source Charge | Qgs | | 7 | 11 | nC | VGS=10V, VDS=10V, ID=20A | 2 |
| Gate Drain Charge | Qgd | | 7 | 17 | nC | VGS=10V, VDS=10V, ID=20A | 2 |
| Body Diode Reverse Recovery Time | trr | | 13 | 20 | ns | IF= 20A, dI/dt= 500A/us | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 29 | 43 | nC | IF= 20A, dI/dt= 500A/us | 2 |
| Forward Transconductance | gFS | | 105 | | S | VDS=5V, ID=20A | 2 |
| Turn-On Delay Time | td(on) | | 7 | | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr | | 8 | | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | td(off) | | 70 | | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf | | 18 | | ns | VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω | 2 |
## CAD (KiCad official)
- Symbol: `AO4402-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ao4402-hxy-etched.step` / `ao4402-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4402-hxy.step` / `ao4402-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757975094373703680) (7 pp, sha256 `ba8853e042c31ddb`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ao4402-hxy-datasheet.pdf)