component

AO4304-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsao4304-vbfactory-2.0.0extractor-text

Verified AO4304-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AO4304-VB · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-_59wk0p8/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ao4304-vb.kicad_sym✓ ao4304-vb.kicad_mod✓ ao4304-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 2h ago
viewers ao4304-vb: viewers · Ray 2h ago
ao4304-vb-etched.glb Publish 0.1.0 · Ray 2h ago
ao4304-vb-etched.step ao4304-vb: factory component page (tier=lcsc) · Ray 2h ago
ao4304-vb-hero.glb ao4304-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 2h ago
ao4304-vb-hero.overlay.json Publish 0.1.0 · Ray 2h ago
ao4304-vb.glb Publish 0.1.0 · Ray 2h ago
ao4304-vb.kicad_mod Publish 0.1.0 · Ray 2h ago
ao4304-vb.kicad_sym Publish 0.1.0 · Ray 2h ago
ao4304-vb.lbr Publish 0.1.0 · Ray 2h ago
ao4304-vb.step Publish 0.1.0 · Ray 2h ago
package.json Publish 0.1.0 · Ray 2h ago
page.json Set visibility: public · Ray 2h ago
README.md Publish 0.1.0 · Ray 2h ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 2h ago

AO4304-VB

VBsemi Elec · MOSFETs · SO-8

AO4304-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, rated for a 30 V drain-source voltage (VDS) with gate-source voltage limited to ±20 V.
2 S passive Source terminal of the N-channel MOSFET, rated for a 30 V drain-source voltage (VDS) with gate-source voltage limited to ±20 V.
3 S passive Source terminal of the N-channel MOSFET, rated for a 30 V drain-source voltage (VDS) with gate-source voltage limited to ±20 V.
4 G passive Gate terminal of the N-channel MOSFET; gate-source voltage is limited to ±20 V per the absolute maximum ratings.
5 D passive Drain terminal of the N-channel MOSFET; continuous drain current is 18 A at TC = 25 °C, with 30 V VDS rating.
6 D passive Drain terminal of the N-channel MOSFET; continuous drain current is 18 A at TC = 25 °C, with 30 V VDS rating.
7 D passive Drain terminal of the N-channel MOSFET; continuous drain current is 18 A at TC = 25 °C, with 30 V VDS rating.
8 D passive Drain terminal of the N-channel MOSFET; continuous drain current is 18 A at TC = 25 °C, with 30 V VDS rating.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 18 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 16 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 15 A TA = 25 °C (notes b, c) 1
Continuous Drain Current ID 13 A TA = 70 °C (notes b, c) 1
Pulsed Drain Current IDM 50 A 1
Continuous Source-Drain Diode Current IS 3.8 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.1 A TA = 25 °C (notes b, c) 1
Single Pulse Avalanche Current IAS 22 A L = 0.1 mH 1
Avalanche Energy EAS 24 mJ 1
Maximum Power Dissipation PD 4.5 W TC = 25 °C 1
Maximum Power Dissipation PD 2.8 W TC = 70 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C (notes b, c) 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C (notes b, c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 38 50 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient RthJA 85 °C/W Steady state (from note d) 1
Maximum Junction-to-Foot (Drain) RthJF 22 28 °C/W Steady state 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0 V, ID = 250 µA 2
VDS Temperature Coefficient ΔVDS/TJ 28 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -6 2
Gate-Source Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 20 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.004 Ω VGS = 10 V, ID = 11 A 2
Drain-Source On-State Resistance RDS(on) 0.005 Ω VGS = 4.5 V, ID = 10 A 2
Gate Resistance Rg 0.36 1.8 3.6 Ω f = 1 MHz 2
Total Gate Charge Qg 15 23 nC VDS = 15 V, VGS = 10 V, ID = 11 A 2
Total Gate Charge Qg 6.8 10.2 nC VDS = 15 V, VGS = 5 V, ID = 11 A 2
Turn-On Delay Time (VGEN = 4.5 V) td(on) 16 24 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time (VGEN = 4.5 V) tr 12 18 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 4.5 V) td(off) 16 24 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time (VGEN = 4.5 V) tf 10 20 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time (VGEN = 10 V) td(on) 8 16 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time (VGEN = 10 V) tr 10 20 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 10 V) td(off) 16 24 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time (VGEN = 10 V) tf 8 15 ns VDD = 15 V, RL = 1.4 Ω, ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 25 A TC = 25 °C 2
Pulse Diode Forward Current ISM 50 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 9 A 2
Body Diode Reverse Recovery Time trr 15 30 ns IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 6 12 nC IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Gate-Source Charge Qgs 2.5 nC 2
Gate-Drain Charge Qgd 2.3 nC 2
Forward Transconductance gfs 52 S VDS = 15 V, ID = 11 A 2
Input Capacitance Ciss 820 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 195 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 73 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Recovery Fall Time ta 8 ns 2
Reverse Recovery Rise Time tb 7 ns 2

CAD (KiCad official)

  • Symbol: AO4304-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ao4304-vb-etched.step / ao4304-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4304-vb.step / ao4304-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 bf61273bde93cfa3, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF