# AO4302-VB

**VBsemi Elec** · MOSFETs · SO-8

AO4302-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal; the datasheet rates continuous source current (diode conduction) at 2.9 A for 10 s and 1.3 A steady state. |
| 2 | S | passive | Source terminal; the datasheet rates continuous source current (diode conduction) at 2.9 A for 10 s and 1.3 A steady state. |
| 3 | S | passive | Source terminal; the datasheet rates continuous source current (diode conduction) at 2.9 A for 10 s and 1.3 A steady state. |
| 4 | G | input | Gate terminal; the datasheet gives a gate-source voltage rating of ±20 V and a gate threshold voltage VGS(th) of 1.0 V to 3.0 V. |
| 5 | D | passive | Drain terminal; the datasheet gives a drain-source voltage rating of 30 V and a continuous drain current of 25 A at TA = 25 °C (10 s). |
| 6 | D | passive | Drain terminal; the datasheet gives a drain-source voltage rating of 30 V and a continuous drain current of 25 A at TA = 25 °C (10 s). |
| 7 | D | passive | Drain terminal; the datasheet gives a drain-source voltage rating of 30 V and a continuous drain current of 25 A at TA = 25 °C (10 s). |
| 8 | D | passive | Drain terminal; the datasheet gives a drain-source voltage rating of 30 V and a continuous drain current of 25 A at TA = 25 °C (10 s). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 25 | A | TA = 25 °C, t ≤ 10 s | 1 |
| Continuous Drain Current | ID |  |  | 17 | A | TA = 25 °C, steady state | 1 |
| Continuous Drain Current | ID |  |  | 20 | A | TA = 70 °C, t ≤ 10 s | 1 |
| Continuous Drain Current | ID |  |  | 13 | A | TA = 70 °C, steady state | 1 |
| Pulsed Drain Current | IDM |  |  | 70 | A | 10 µs pulse width | 1 |
| Continuous Source Current (Diode Conduction) | IS |  |  | 2.9 | A | t ≤ 10 s | 1 |
| Continuous Source Current (Diode Conduction) | IS |  |  | 1.3 | A | steady state | 1 |
| Avalanche Current | IAS |  |  | 50 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 3.5 | W | TA = 25 °C, t ≤ 10 s | 1 |
| Maximum Power Dissipation | PD |  |  | 1.6 | W | TA = 25 °C, steady state | 1 |
| Maximum Power Dissipation | PD |  |  | 2.2 | W | TA = 70 °C, t ≤ 10 s | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | W | TA = 70 °C, steady state | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 29 | 35 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 67 | 80 | °C/W | steady state | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF |  | 13 | 16 | °C/W | steady state | 1 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 30 |  |  | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Diode Forward Voltage | VSD |  | 0.72 | 1.1 | V | IS = 2.9 A, VGS = 0 V | 2 |
| Total Gate Charge | Qg |  | 45 | 70 | nC | VDS = 15 V, VGS = 4.5 V, ID = 20 A | 2 |
| Turn-On Delay Time | td(on) |  | 27 | 40 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 |
| Rise Time | tr |  | 21 | 35 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 107 | 160 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 |
| Fall Time | tf |  | 43 | 65 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 |
| Source-Drain Reverse Recovery Time | trr |  | 45 | 70 | ns | IF = 2.9 A, dI/dt = 100 A/µs | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.003 |  | Ω | VGS = 10 V, ID = 25 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.004 |  | Ω | VGS = 4.5 V, ID = 22 A | 2 |
| Forward Transconductance | gfs |  | 110 |  | S | VDS = 15 V, ID = 25 A | 2 |
| Input Capacitance | Ciss |  | 6500 |  | pF | VDS = 15 V, VGS = 4.5 V, ID = 20 A | 2 |
| Output Capacitance | Coss |  | 930 |  | pF | VDS = 15 V, VGS = 4.5 V, ID = 20 A | 2 |
| Reverse Transfer Capacitance | Crss |  | 610 |  | pF | VDS = 15 V, VGS = 4.5 V, ID = 20 A | 2 |
| Gate-Source Charge | Qgs |  | 20 |  | nC | VDS = 15 V, VGS = 4.5 V, ID = 20 A | 2 |
| Gate-Drain Charge | Qgd |  | 16 |  | nC | VDS = 15 V, VGS = 4.5 V, ID = 20 A | 2 |
| Gate Resistance | Rg |  | 1.1 |  | Ω | f = 1.0 MHz | 2 |

## CAD (KiCad official)

- Symbol: `AO4302-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `ao4302-vb-etched.step` / `ao4302-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4302-vb.step` / `ao4302-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/ao4302-vb-datasheet.pdf) (8 pp, sha256 `800995da2b614136`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4302-vb-datasheet.pdf)