# AO4268

**Alpha Omega Semicon** · MOSFETs · SOIC-8

AO4268 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied to pins 2 and 3; body diode continuous current is 4A max. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to pins 1 and 3 and carrying the 19A continuous drain current at TA=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to pins 1 and 2, with VGS rated at ±20V relative to the gate. |
| 4 | G | input | Gate of the N-channel MOSFET, with a ±20V maximum gate-source voltage and a threshold of 1.3V min to 2.3V max at 250µA. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied to pins 6, 7 and 8, with a 60V maximum drain-source voltage. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied to pins 5, 7 and 8, with a 76A maximum pulsed drain current. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied to pins 5, 6 and 8, with RDS(ON) below 4.8mΩ at VGS=10V. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied to pins 5, 6 and 7, with RDS(ON) below 6.5mΩ at VGS=4.5V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | ID=250µA, VGS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.8 | 2.3 | V | VDS=VGS, ID=250µA | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  | 1 |  | µA | VDS=60V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS |  |  | 5 | µA | VDS=60V, VGS=0V, TJ=55°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 4 | 4.8 | mΩ | VGS=10V, ID=19A | 2 |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) |  | 6.3 | 7.6 | mΩ | VGS=10V, ID=19A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance (4.5V) | RDS(ON) |  | 5.2 | 6.5 | mΩ | VGS=4.5V, ID=16A | 2 |
| Forward Transconductance | gFS |  | 83 |  | S | VDS=5V, ID=19A | 2 |
| Diode Forward Voltage | VSD |  | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 4 | A |  | 2 |
| Input Capacitance | Ciss |  | 2500 |  | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 670 |  | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 65 |  | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Gate resistance | Rg | 0.5 | 1.2 | 2 | Ω | f=1MHz | 2 |
| Total Gate Charge (10V) | Qg (10V) |  | 44 | 65 | nC | VGS=10V, VDS=30V, ID=19A | 2 |
| Total Gate Charge (4.5V) | Qg (4.5V) |  | 21 | 30 | nC |  | 2 |
| Gate Source Charge | Qgs |  | 6.5 |  | nC |  | 2 |
| Gate Drain Charge | Qgd |  | 8.5 |  | nC |  | 2 |
| Turn-On DelayTime | tD(on) |  | 7.5 |  | ns | VGS=10V, VDS=30V, RL=1.6Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 6.5 |  | ns | VGS=10V, VDS=30V, RL=1.6Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 38 |  | ns | VGS=10V, VDS=30V, RL=1.6Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 8 |  | ns | VGS=10V, VDS=30V, RL=1.6Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr |  | 22 |  | ns | IF=19A, di/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 80 |  | nC | IF=19A, di/dt=500A/µs | 2 |
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| VDS Spike | VSPIKE |  |  | 72 | V | 10µs | 1 |
| Continuous Drain Current | ID |  |  | 19 | A | TA=25°C, t≤10s | 1 |
| Continuous Drain Current | ID |  |  | 14.5 | A | TA=25°C, Steady-State | 1 |
| Continuous Drain Current | ID |  |  | 16 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 76 | A |  | 1 |
| Avalanche Current | IAS |  |  | 30 | A |  | 1 |
| Avalanche energy | EAS |  |  | 135 | mJ | L=0.3mH | 1 |
| Power Dissipation | PD |  |  | 3.1 | W | TA=25°C, t≤10s | 1 |
| Power Dissipation | PD |  |  | 2 | W | TA=70°C, t≤10s | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RθJA |  | 31 | 40 | °C/W | t≤10s | 1 |
| Maximum Junction-to-Ambient | RθJA |  | 59 | 75 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead | RθJL |  | 16 | 24 | °C/W | Steady-State | 1 |

## CAD (KiCad official)

- Symbol: `AO4268`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `ao4268-etched.step` / `ao4268-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4268.step` / `ao4268.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590227362702270464) (5 pp, sha256 `68a3f30b5196be45`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4268-datasheet.pdf)