component
AO4266-MS
Public Made by Adomby adom
MSKSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4266-MS
MSKSEMI · MOSFETs · SOP-8
AO4266-MS from MSKSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, one of three source pins on the SOP-8 outline. |
| 2 | S | passive | Source of the N-channel MOSFET, one of three source pins on the SOP-8 outline. |
| 3 | S | passive | Source of the N-channel MOSFET, one of three source pins on the SOP-8 outline. |
| 4 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated 60 V drain-source and 10 A continuous, tied to the other drain pins. |
| 6 | D | passive | Drain of the N-channel MOSFET, rated 60 V drain-source and 10 A continuous, tied to the other drain pins. |
| 7 | D | passive | Drain of the N-channel MOSFET, rated 60 V drain-source and 10 A continuous, tied to the other drain pins. |
| 8 | D | passive | Drain of the N-channel MOSFET, rated 60 V drain-source and 10 A continuous, tied to the other drain pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 3 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 0.9 | 1.3 | 1.8 | V | VDS=VGS ,ID=250μA | 3 |
| Drain-Source On-State Resistance | RDS(ON) | 10 | 13 | mΩ | VGS=10V, ID=10A | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | 11.5 | 15 | mΩ | VGS=4.5V, ID=5A | 3 | |
| Forward Transconductance | gFS | 40 | S | VDS=5V,ID=12A | 3 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=10A | 3 | ||
| Diode Forward Current | IS | 10 | A | 3 | |||
| Drain-Source Voltage | VDS | 60 | V | TC=25℃ | 2 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 2 | |
| Drain Current-Continuous | ID | 10 | A | TC=25℃ | 2 | ||
| Drain Current-Continuous (TC=100℃) | ID (100℃) | 8.5 | A | TC=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 30 | A | 2 | |||
| Maximum Power Dissipation | PD | 3 | W | TC=25℃ | 2 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 42 | ℃/W | Note 2: mounted on 1in2 FR-4 board with 2oz. Copper, still air, TA=25°C | 2 |
CAD (KiCad official)
- Symbol:
AO4266-MS - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ao4266-ms-etched.step/ao4266-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4266-ms.step/ao4266-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (8 pp, sha256
9ad0f18ff8424e1d, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).