component
AO4240&5-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4240&5-VB
VBsemi Elec · MOSFETs · SO-8
AO4240&5-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates the continuous source (diode conduction) current at 6 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates the continuous source (diode conduction) current at 6 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates the continuous source (diode conduction) current at 6 A. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 60 V and the continuous drain current 16 A at TC = 25 °C. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 60 V and the continuous drain current 16 A at TC = 25 °C. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 60 V and the continuous drain current 16 A at TC = 25 °C. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 60 V and the continuous drain current 16 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 16 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 9 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 6 | A | 1 | |||
| Pulsed Drain Current | IDM | 67 | A | 1 | |||
| Single Pulse Avalanche Current | IAS | 50 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 125 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 7.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.3 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient (PCB Mount) | RthJA | 80 | °C/W | PCB mount, 1" square PCB (FR-4 material) | 1 | ||
| Junction-to-Foot (Drain) | RthJF | 21 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 3 | 3.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = 60 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = 60 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VGS = 0 V, VDS = 60 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 30 | A | VGS = 10 V, VDS5 V (relation symbol lost in extraction) | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.011 | Ω | VGS = 10 V, ID = 6 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.015 | Ω | VGS = 10 V, ID = 6 A, TJ = 175 °C | 2 | ||
| Input Capacitance | Ciss | 3165 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 382 | 480 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 153 | 195 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | |
| Gate Resistance | Rg | 0.4 | 0.87 | 1.3 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 13 | 20 | ns | VDD = 30 V, RL = 2.5 Ω, ID ≈ 12 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 12 | 18 | ns | VDD = 30 V, RL = 2.5 Ω, ID ≈ 12 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 25 | 38 | ns | VDD = 30 V, RL = 2.5 Ω, ID ≈ 12 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 9 | 14 | ns | VDD = 30 V, RL = 2.5 Ω, ID ≈ 12 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulsed Current | ISM | 67 | A | 2 | |||
| Forward Voltage | VSD | 0.72 | 1.2 | V | IF = 1.7 A, VGS = 0 | 2 |
CAD (KiCad official)
- Symbol:
AO4240&5-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
ao4240-5-vb-etched.step/ao4240-5-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4240-5-vb.step/ao4240-5-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
f8060b66a0d6b58f, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).