component
AO3493-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AO3493-HXY
HXY MOSFET · MOSFETs · SOT-23
AO3493-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, threshold VGS(th) -0.4 V min to -1 V max at -250 µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current is rated -3 A and body diode forward current IS is -3 A max. |
| 3 | D | passive | Drain; drain-source voltage rated -20 V, continuous drain current -3 A and pulsed -10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | -3 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | -10 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 125 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | -24 | V | VGS=0V ID=-250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 60 | 80 | mΩ | VGS=-4.5V, ID=-3A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 85 | 103 | mΩ | VGS=-2.5V, ID=-2A | 2 | |
| Forward Transconductance | gFS | 5 | S | VDS=-5V,ID=-2A | 2 | ||
| Total Gate Charge | Qg | 3.3 | 12 | nC | VDS=-10V,ID=-3A, VGS=-2.5V | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=1.3A | 2 | ||
| Diode Forward Current | IS | -3 | A | 2 | |||
| Input Capacitance | Clss | 405 | PF | VDS=-10V,VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 75 | PF | VDS=-10V,VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 55 | PF | VDS=-10V,VGS=0V, F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 11 | nS | VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω | 2 | ||
| Turn-on Rise Time | tr | 35 | nS | VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 30 | nS | VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω | 2 | ||
| Turn-Off Fall Time | tf | 10 | nS | VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω | 2 | ||
| Gate-Source Charge | Qgs | 0.7 | nC | VDS=-10V,ID=-3A, VGS=-2.5V | 2 | ||
| Gate-Drain Charge | Qgd | 1.3 | nC | VDS=-10V,ID=-3A, VGS=-2.5V | 2 |
CAD (KiCad official)
- Symbol:
AO3493-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ao3493-hxy-etched.step/ao3493-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3493-hxy.step/ao3493-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
123f79fca4f7b745, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AO3493-HXY
**HXY MOSFET** · MOSFETs · SOT-23
AO3493-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, threshold VGS(th) -0.4 V min to -1 V max at -250 µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current is rated -3 A and body diode forward current IS is -3 A max. |
| 3 | D | passive | Drain; drain-source voltage rated -20 V, continuous drain current -3 A and pulsed -10 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -20 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | TA=25℃ | 1 |
| Drain Current-Continuous | ID | | | -3 | A | TA=25℃ | 1 |
| Drain Current-Pulsed | IDM | | | -10 | A | Note 1 | 1 |
| Maximum Power Dissipation | PD | | | 1 | W | TA=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 125 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -20 | -24 | | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-20V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 60 | 80 | mΩ | VGS=-4.5V, ID=-3A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 85 | 103 | mΩ | VGS=-2.5V, ID=-2A | 2 |
| Forward Transconductance | gFS | 5 | | | S | VDS=-5V,ID=-2A | 2 |
| Total Gate Charge | Qg | | 3.3 | 12 | nC | VDS=-10V,ID=-3A, VGS=-2.5V | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V,IS=1.3A | 2 |
| Diode Forward Current | IS | | | -3 | A | | 2 |
| Input Capacitance | Clss | | 405 | | PF | VDS=-10V,VGS=0V, F=1.0MHz | 2 |
| Output Capacitance | Coss | | 75 | | PF | VDS=-10V,VGS=0V, F=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 55 | | PF | VDS=-10V,VGS=0V, F=1.0MHz | 2 |
| Turn-on Delay Time | td(on) | | 11 | | nS | VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω | 2 |
| Turn-on Rise Time | tr | | 35 | | nS | VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω | 2 |
| Turn-Off Delay Time | td(off) | | 30 | | nS | VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω | 2 |
| Turn-Off Fall Time | tf | | 10 | | nS | VDD=-10V,ID=-1A VGS=-4.5V,RGEN=10Ω | 2 |
| Gate-Source Charge | Qgs | | 0.7 | | nC | VDS=-10V,ID=-3A, VGS=-2.5V | 2 |
| Gate-Drain Charge | Qgd | | 1.3 | | nC | VDS=-10V,ID=-3A, VGS=-2.5V | 2 |
## CAD (KiCad official)
- Symbol: `AO3493-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ao3493-hxy-etched.step` / `ao3493-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao3493-hxy.step` / `ao3493-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/ao3493-hxy-datasheet.pdf) (7 pp, sha256 `123f79fca4f7b745`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ao3493-hxy-datasheet.pdf)