component
AO3485C
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 25d ago |
| viewers | 25d ago |
| ao3485c-etched.glb | 25d ago |
| ao3485c-etched.step | 25d ago |
| ao3485c-hero.glb | 25d ago |
| ao3485c-hero.overlay.json | 25d ago |
| ao3485c.glb | 25d ago |
| ao3485c.kicad_mod | 25d ago |
| ao3485c.kicad_sym | 25d ago |
| ao3485c.lbr | 25d ago |
| ao3485c.step | 25d ago |
| package.json | 25d ago |
| page.json | 19d ago |
| README.md | 19d ago |
AO3485C
Alpha Omega Semicon · MOSFETs · SOT-23-3
AO3485C from Alpha Omega Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the 20V P-channel MOSFET; gate-source voltage is rated ±8V in the absolute maximum ratings. |
| 2 | S | passive | Source of the P-channel MOSFET; maximum body-diode continuous current is -2A (IS). |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage is -20V with continuous drain current of -4.5A at VGS=-4.5V, TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | -4.5 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -3.5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -18 | A | 1 | |||
| Power Dissipation | PD | 1.3 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 0.8 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID=-250mA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | μA | TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VDS=0V, VGS=±8V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.15 | -0.55 | -0.95 | V | VDS=VGS, ID=-250mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 33 | 40 | mΩ | VGS=-4.5V, ID=-4.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 43 | 52 | mΩ | TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 42 | 55 | mΩ | VGS=-2.5V, ID=-4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 54 | 72 | mΩ | VGS=-1.8V, ID=-3.5A | 2 | |
| Diode Forward Voltage | VSD | -0.7 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -2 | A | 2 | |||
| Gate Resistance | Rg | 15 | 30 | Ω | f=1MHz | 2 | |
| Total Gate Charge | Qg | 8.5 | 17 | nC | VGS=-4.5V, VDS=-10V, ID=-4.5A | 2 | |
| Forward Transconductance | gFS | 20 | S | VDS=-5V, ID=-4.5A | 2 | ||
| Input Capacitance | Ciss | 930 | pF | VGS=0V, VDS=-10V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 90 | pF | VGS=0V, VDS=-10V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 80 | pF | VGS=0V, VDS=-10V, f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 1 | nC | VGS=-4.5V, VDS=-10V, ID=-4.5A | 2 | ||
| Gate Drain Charge | Qgd | 2.5 | nC | VGS=-4.5V, VDS=-10V, ID=-4.5A | 2 | ||
| Turn-On Delay Time | tD(on) | 12 | ns | VGS=-4.5V, VDS=-10V, RL=2.22W, RGEN=3W | 2 | ||
| Turn-On Rise Time | tr | 11 | ns | VGS=-4.5V, VDS=-10V, RL=2.22W, RGEN=3W | 2 | ||
| Turn-Off Delay Time | tD(off) | 82 | ns | VGS=-4.5V, VDS=-10V, RL=2.22W, RGEN=3W | 2 | ||
| Turn-Off Fall Time | tf | 35 | ns | VGS=-4.5V, VDS=-10V, RL=2.22W, RGEN=3W | 2 | ||
| Body Diode Reverse Recovery Time | trr | 25 | ns | IF=-4.5A, di/dt=500A/ms | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 37 | nC | IF=-4.5A, di/dt=500A/ms | 2 |
CAD (KiCad official)
- Symbol:
AO3485C - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
ao3485c-etched.step/ao3485c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3485c.step/ao3485c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256
2c22abf02d2e993b, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).