component
AO3480A
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AO3480A
UMW · MOSFETs · SOT-23
AO3480A from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the N-channel MOSFET; the absolute maximum gate-source voltage is VGS = ±12 V. |
| 2 | S | passive | SOURCE terminal of the N-channel MOSFET. |
| 3 | D | passive | DRAIN terminal of the N-channel MOSFET; the absolute maximum drain-source voltage is VDS = 30 V and continuous drain current is ID = 5.7 A at TA = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 5.7 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 4.7 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | 1 | |||
| Power Dissipation | PD | 1.4 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 0.9 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | 70 | 100 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 63 | 90 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead | RθJL | 125 | 80 | °C/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | 100 | nA | VDS=0V, VGS=±12V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.65 | 1.05 | 1.45 | V | VDS=VGS, ID=250μA | 2 |
| On state drain current | ID(ON) | 30 | A | VGS=4.5V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18 | 26.5 | mΩ | VGS=10V, ID=5.7A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 19 | 32 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 24 | 50 | mΩ | VGS=2.5V, ID=3A | 2 | |
| Diode Forward Voltage | VSD | 0.7 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 1.5 | A | 2 | |||
| Gate resistance | Rg | 3 | 4.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
AO3480A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ao3480a-etched.step/ao3480a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3480a.step/ao3480a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (9 pp, sha256
ac08517a3ddbdf73, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AO3480A
**UMW** · MOSFETs · SOT-23
AO3480A from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the N-channel MOSFET; the absolute maximum gate-source voltage is VGS = ±12 V. |
| 2 | S | passive | SOURCE terminal of the N-channel MOSFET. |
| 3 | D | passive | DRAIN terminal of the N-channel MOSFET; the absolute maximum drain-source voltage is VDS = 30 V and continuous drain current is ID = 5.7 A at TA = 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | 5.7 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | 4.7 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | 30 | A | | 1 |
| Power Dissipation | PD | | | 1.4 | W | TA=25°C | 1 |
| Power Dissipation | PD | | | 0.9 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | | 70 | 100 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | | 63 | 90 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead | RθJL | | 125 | 80 | °C/W | Steady-State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 |
| Gate-Body leakage current | IGSS | | | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.65 | 1.05 | 1.45 | V | VDS=VGS, ID=250μA | 2 |
| On state drain current | ID(ON) | 30 | | | A | VGS=4.5V, VDS=5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 18 | 26.5 | mΩ | VGS=10V, ID=5.7A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 19 | 32 | mΩ | VGS=4.5V, ID=5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 24 | 50 | mΩ | VGS=2.5V, ID=3A | 2 |
| Diode Forward Voltage | VSD | | 0.7 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 1.5 | A | | 2 |
| Gate resistance | Rg | | 3 | 4.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `AO3480A`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ao3480a-etched.step` / `ao3480a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao3480a.step` / `ao3480a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755875466576039936) (9 pp, sha256 `ac08517a3ddbdf73`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ao3480a-datasheet.pdf)