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AO3442-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AO3442-HXY

HXY MOSFET · MOSFETs · SOT-23-3L

AO3442-HXY from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage limited to ±20 V per the absolute maximum ratings.
2 D passive Drain of the N-channel MOSFET, rated for a drain-source voltage of 100 V and 3 A continuous drain current.
3 S passive Source of the N-channel MOSFET, the reference terminal for the gate-source voltage rating.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 3 A 1
Drain Current-Pulsed IDM 1.4 A Note 1 1
Maximum Power Dissipation PD 2.3 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 100 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 220 286 mΩ VGS=10V, ID=2A 2
Drain-Source On-State Resistance RDS(ON) 223 312 mΩ VGS=4.5V, ID=1A 2
Forward Transconductance gFS 5 S VDS=5V,ID=3A 2
Input Capacitance Clss 320 PF VDS=25V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 20 PF VDS=25V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 14 PF VDS=25V,VGS=0V, F=1.0MHz 2
Turn-Off Delay Time td(off) 17 nS VDD=30V, RL=19Ω, VGS=10V, RG=3Ω 2
Total Gate Charge Qg 5.2 nC VDS=30V,ID=3A, VGS=10V 2
Gate-Source Charge Qgs 1.2 nC VDS=30V,ID=3A, VGS=10V 2
Gate-Drain Charge Qgd 1.6 nC VDS=30V,ID=3A, VGS=10V 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=3A 2
Diode Forward Current IS 3 A Note 2 2

CAD (KiCad official)

  • Symbol: AO3442-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: ao3442-hxy-etched.step / ao3442-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao3442-hxy.step / ao3442-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 a615bfc67360897e, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF