# AO3435

**Alpha & Omega Semicon** · MOSFETs · SOT-23

AO3435 from Alpha & Omega Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet shows operation with gate voltages as low as 1.5V, with VGS rated ±8V. |
| 2 | S | passive | Source; the body diode runs from drain to source, with a maximum continuous body-diode current of -1.4A. |
| 3 | D | passive | Drain; VDS is rated -20V, and continuous ID is -3.5A (10s) or -2.9A (steady state) at TA=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | ID=-250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS=-20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -5 | µA | VDS=-20V, VGS=0V, TJ=55°C | 2 |
| Gate-Body leakage current | IGSS |  |  | 100 | nA | VDS=0V, VGS=±8V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.65 | -1 | V | VDS=VGS, ID=-250µA | 2 |
| On state drain current | ID(ON) | -25 |  |  | A | VGS=-4.5V, VDS=-5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 56 | 70 | mΩ | VGS=-4.5V, ID=-3.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 80 | 100 | mΩ | VGS=-4.5V, ID=-3.5A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 70 | 90 | mΩ | VGS=-2.5V, ID=-3.0A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 85 | 110 | mΩ | VGS=-1.8V, ID=-2.0A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 100 | 130 | mΩ | VGS=-1.5V, ID=-0.5A | 2 |
| Diode Forward Voltage | VSD |  | -0.7 | -1 | V | IS=-1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | -1.4 | A |  | 2 |
| Input Capacitance | Ciss |  | 510 | 745 | pF | VGS=0V, VDS=-10V, f=1MHz | 2 |
| Gate resistance | Rg |  | 18 | 23 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg |  | 5.6 | 11 | nC | VGS=-4.5V, VDS=-10V, ID=-3.5A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 17 | 49 | ns | IF=-3.5A, dI/dt=100A/µs | 2 |
| Forward Transconductance | gFS |  | 15 |  | S | VDS=-5V, ID=-3.5A | 2 |
| Output Capacitance | Coss |  | 70 |  | pF | VGS=0V, VDS=-10V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 52 |  | pF | VGS=0V, VDS=-10V, f=1MHz | 2 |
| Gate Source Charge | Qgs |  | 0.6 |  | nC | VGS=-4.5V, VDS=-10V, ID=-3.5A | 2 |
| Gate Drain Charge | Qgd |  | 1.8 |  | nC | VGS=-4.5V, VDS=-10V, ID=-3.5A | 2 |
| Turn-On Delay Time | tD(on) |  | 11 |  | ns | VGS=-4.5V, VDS=-10V, RL=3Ω, RGEN=6Ω | 2 |
| Turn-On Rise Time | tr |  | 10 |  | ns | VGS=-4.5V, VDS=-10V, RL=3Ω, RGEN=6Ω | 2 |
| Turn-Off Delay Time | tD(off) |  | 60 |  | ns | VGS=-4.5V, VDS=-10V, RL=3Ω, RGEN=6Ω | 2 |
| Turn-Off Fall Time | tf |  | 30 |  | ns | VGS=-4.5V, VDS=-10V, RL=3Ω, RGEN=6Ω | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 4 |  | nC | IF=-3.5A, dI/dt=100A/µs | 2 |
| Drain-Source Voltage | VDS |  |  | -20 | V | TA=25°C | 1 |
| Gate-Source Voltage | VGS | -8 |  | 8 | V | TA=25°C | 1 |
| Continuous Drain Current, 10 s | ID |  |  | -3.5 | A | TA=25°C, 10 Sec | 1 |
| Continuous Drain Current, Steady State | ID |  |  | -2.9 | A | TA=25°C, Steady State | 1 |
| Continuous Drain Current, 10 s | ID |  |  | -2.7 | A | TA=70°C, 10 Sec | 1 |
| Continuous Drain Current, Steady State | ID |  |  | -2.3 | A | TA=70°C, Steady State | 1 |
| Pulsed Drain Current | IDM |  |  | -25 | A |  | 1 |
| Power Dissipation, 10 s | PD |  |  | 1.4 | W | TA=25°C, 10 Sec | 1 |
| Power Dissipation, Steady State | PD |  |  | 1 | W | TA=25°C, Steady State | 1 |
| Power Dissipation, 10 s | PD |  |  | 0.9 | W | TA=70°C, 10 Sec | 1 |
| Power Dissipation, Steady State | PD |  |  | 0.6 | W | TA=70°C, Steady State | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RθJA |  | 70 | 90 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RθJA |  | 100 | 125 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead | RθJL |  | 63 | 80 | °C/W | Steady-State | 1 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | silver | Lead Frame Bare Cu Die Attach Ag Epoxy | 10 |

## CAD (KiCad official)

- Symbol: `AO3435`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ao3435-etched.step` / `ao3435-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao3435.step` / `ao3435.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha & Omega Semicon datasheet](docs/ao3435-datasheet.pdf) (11 pp, sha256 `bd4f309c4a8ae37d`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao3435-datasheet.pdf)