component
AO3434A
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ao3434a: specified limits as data (metadata.characteristics, 38 rows from the datasheet)
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16d ago
AO3434A
Alpha Omega Semicon · MOSFETs · SOT-23
AO3434A from Alpha Omega Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±12 V maximum, with VGS(th) of 0.7 V min, 1.05 V typ and 1.5 V max at ID=250µA, and the device has typical HBM Class 3A ESD protection. |
| 2 | S | passive | Source; body-diode continuous current is 1.5 A maximum and the thermal-limited continuous drain current is 4 A at TA=25°C. |
| 3 | D | passive | Drain; drain-source voltage is rated 30 V maximum, continuous current 4 A at TA=25°C (3 A at 70°C) and pulsed current 20 A, with RDS(ON) below 52 mΩ at VGS=10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 4 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 3 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Power Dissipation | PD | 1.4 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 0.9 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 63 | 80 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 100 | 125 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead | RθJL | 70 | 90 | °C/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | µA | VDS=0V, VGS=±10V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.7 | 1.05 | 1.5 | V | VDS=VGS, ID=250µA | 2 |
| On State Drain Current | ID(ON) | 20 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 42 | 52 | mΩ | VGS=10V, ID=4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 66 | 82 | mΩ | TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 47 | 60 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 59 | 78 | mΩ | VGS=2.5V, ID=2A | 2 | |
| Diode Forward Voltage | VSD | 0.75 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 1.5 | A | 2 | |||
| Total Gate Charge | Qg (10V) | 5.7 | 10 | nC | VGS=10V, VDS=15V, ID=4A | 2 | |
| Total Gate Charge | Qg (4.5V) | 2.6 | 5 | nC | 2 | ||
| Forward Transconductance | gFS | 15 | S | VDS=5V, ID=4A | 2 | ||
| Input Capacitance | Ciss | 245 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 35 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 20 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | ||
| Gate Resistance | Rg | 5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 0.5 | nC | VGS=10V, VDS=15V, ID=4A | 2 | ||
| Gate Drain Charge | Qgd | 1 | nC | VGS=10V, VDS=15V, ID=4A | 2 | ||
| Turn-On DelayTime | tD(on) | 2 | ns | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 3.5 | ns | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 22 | ns | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 3.5 | ns | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 6.5 | ns | IF=4A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 7.5 | nC | IF=4A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
AO3434A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ao3434a-etched.step/ao3434a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3434a.step/ao3434a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256
77b784899b3f87e9, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AO3434A
**Alpha Omega Semicon** · MOSFETs · SOT-23
AO3434A from Alpha Omega Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±12 V maximum, with VGS(th) of 0.7 V min, 1.05 V typ and 1.5 V max at ID=250µA, and the device has typical HBM Class 3A ESD protection. |
| 2 | S | passive | Source; body-diode continuous current is 1.5 A maximum and the thermal-limited continuous drain current is 4 A at TA=25°C. |
| 3 | D | passive | Drain; drain-source voltage is rated 30 V maximum, continuous current 4 A at TA=25°C (3 A at 70°C) and pulsed current 20 A, with RDS(ON) below 52 mΩ at VGS=10V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | 4 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | 3 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | 20 | A | | 1 |
| Power Dissipation | PD | | | 1.4 | W | TA=25°C | 1 |
| Power Dissipation | PD | | | 0.9 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RθJA | | 63 | 80 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RθJA | | 100 | 125 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead | RθJL | | 70 | 90 | °C/W | Steady-State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 5 | µA | TJ=55°C | 2 |
| Gate-Body Leakage Current | IGSS | -10 | | 10 | µA | VDS=0V, VGS=±10V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.7 | 1.05 | 1.5 | V | VDS=VGS, ID=250µA | 2 |
| On State Drain Current | ID(ON) | 20 | | | A | VGS=10V, VDS=5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 42 | 52 | mΩ | VGS=10V, ID=4A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 66 | 82 | mΩ | TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 47 | 60 | mΩ | VGS=4.5V, ID=3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 59 | 78 | mΩ | VGS=2.5V, ID=2A | 2 |
| Diode Forward Voltage | VSD | | 0.75 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 1.5 | A | | 2 |
| Total Gate Charge | Qg (10V) | | 5.7 | 10 | nC | VGS=10V, VDS=15V, ID=4A | 2 |
| Total Gate Charge | Qg (4.5V) | | 2.6 | 5 | nC | | 2 |
| Forward Transconductance | gFS | | 15 | | S | VDS=5V, ID=4A | 2 |
| Input Capacitance | Ciss | | 245 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss | | 35 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 20 | | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate Resistance | Rg | | 5 | | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Gate Source Charge | Qgs | | 0.5 | | nC | VGS=10V, VDS=15V, ID=4A | 2 |
| Gate Drain Charge | Qgd | | 1 | | nC | VGS=10V, VDS=15V, ID=4A | 2 |
| Turn-On DelayTime | tD(on) | | 2 | | ns | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr | | 3.5 | | ns | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) | | 22 | | ns | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf | | 3.5 | | ns | VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr | | 6.5 | | ns | IF=4A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 7.5 | | nC | IF=4A, dI/dt=500A/µs | 2 |
## CAD (KiCad official)
- Symbol: `AO3434A`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ao3434a-etched.step` / `ao3434a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao3434a.step` / `ao3434a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586176335412932608) (5 pp, sha256 `77b784899b3f87e9`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ao3434a-datasheet.pdf)