component
AO3422-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| ao3422-hxy-etched.glb | 23d ago |
| ao3422-hxy-etched.step | 23d ago |
| ao3422-hxy-hero.glb | 23d ago |
| ao3422-hxy-hero.overlay.json | 23d ago |
| ao3422-hxy.glb | 23d ago |
| ao3422-hxy.kicad_mod | 23d ago |
| ao3422-hxy.kicad_sym | 23d ago |
| ao3422-hxy.lbr | 23d ago |
| ao3422-hxy.step | 23d ago |
| package.json | 23d ago |
| page.json | 17d ago |
| README.md | 17d ago |
AO3422-HXY
HXY MOSFET · MOSFETs · SOT-23-3L
AO3422-HXY from HXY MOSFET, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel enhancement-mode MOSFET; gate-source voltage is rated ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 60 V and continuous drain current is rated 4.5 A. |
| 3 | S | passive | Source of the N-channel MOSFET; continuous source current is rated 17 A and pulsed source current 50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (VGS=10V) | RDS(ON) | 73 | 85 | mΩ | VGS=10V , ID=5A | 2 | |
| Static Drain-Source On-Resistance (VGS=4.5V) | RDS(ON) | 82 | 93 | mΩ | VGS=4.5V , ID=5A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VGS=VDS , ID=250uA | 2 | |
| Drain-Source Leakage Current (TJ=25℃) | IDSS | 1 | uA | VDS=48V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (TJ=55℃) | IDSS | 5 | uA | VDS=48V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 17 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 50 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | TA=25°C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C unless otherwise noted | 1 | |
| Drain Current-Continuous | ID | 4.5 | A | TA=25°C unless otherwise noted | 1 | ||
| Drain Current-Pulsed (Note 1) | IDM | 15 | A | TA=25°C unless otherwise noted | 1 | ||
| Maximum Power Dissipation | PD | 8 | W | TA=25°C unless otherwise noted | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | TA=25°C unless otherwise noted | 1 | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 89 | °C/W | Note 2: surface mounted on a 1 inch2 FR-4 board with 2OZ copper | 1 |
CAD (KiCad official)
- Symbol:
AO3422-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
ao3422-hxy-etched.step/ao3422-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3422-hxy.step/ao3422-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
196ef2fb984a8e17, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).