component
AO3421E
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO3421E
Alpha & Omega Semicon · MOSFETs · SOT-23-3
AO3421E from Alpha & Omega Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20 V absolute maximum, with a typical threshold of -2 V (-1.4 to -2.5 V). |
| 2 | S | passive | Source of the P-channel MOSFET; the body-diode continuous current is rated at -1.5 A. |
| 3 | D | passive | Drain; drain-source voltage is rated at -30 V, with continuous drain current of -3 A at TA=25°C and pulsed drain current of -18 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | SOT-23-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C | 1 | |
| Continuous Drain Current | ID | -3 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -2 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -18 | A | TA=25°C | 1 | ||
| Power Dissipation | PD | 1.4 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 0.9 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 70 | 90 | °C/W | t ≤ 10s | 1 | |
| Junction-to-Ambient Thermal Resistance | RθJA | 100 | 125 | °C/W | Steady-State | 1 | |
| Junction-to-Lead Thermal Resistance | RθJL | 63 | 80 | °C/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS=-30V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | 10 | µA | VDS=0V, VGS=±16V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1.4 | -2 | -2.5 | V | VDS=VGS, ID=-250µA | 2 |
| On State Drain Current | ID(ON) | -18 | A | VGS=-10V, VDS=-5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 78 | 95 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 112 | 135 | mΩ | VGS=-10V, ID=-3A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 120 | 160 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Forward Transconductance | gFS | 6 | S | VDS=-5V, ID=-3A | 2 | ||
| Diode Forward Voltage | VSD | -0.8 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -1.5 | A | 2 | |||
| Gate Resistance | Rg | 9.5 | 19 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | |
| Total Gate Charge (10V) | Qg | 4.6 | 8 | nC | VGS=-10V, VDS=-15V, ID=-3A | 2 | |
| Total Gate Charge (4.5V) | Qg | 2.2 | 4 | nC | VGS=-10V, VDS=-15V, ID=-3A | 2 | |
| Input Capacitance | Ciss | 215 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 46.5 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 27.5 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 0.85 | nC | 2 | |||
| Gate Drain Charge | Qgd | 1.2 | nC | 2 | |||
| Turn-On Delay Time | tD(on) | 8 | ns | VGS=-10V, VDS=-15V, RL=5Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 4 | ns | VGS=-10V, VDS=-15V, RL=5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 13.5 | ns | VGS=-10V, VDS=-15V, RL=5Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 4 | ns | VGS=-10V, VDS=-15V, RL=5Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 9 | ns | IF=-3A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 16 | nC | IF=-3A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
AO3421E - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
ao3421e-etched.step/ao3421e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3421e.step/ao3421e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (10 pp, sha256
350607d2e3cf5a5c, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).