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AO3415A

Public Made by Adom

by adom

UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 26d ago
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ao3415a-etched.glb ao3415a: factory component page (tier=lcsc) · Ray 26d ago
ao3415a-etched.step ao3415a: factory component page (tier=lcsc) · Ray 26d ago
ao3415a-hero.glb ao3415a: hero GLB from the etched model (keeps the MPN mark) · Ray 26d ago
ao3415a-hero.overlay.json Publish 0.1.0 · Ray 26d ago
ao3415a.glb Publish 0.1.0 · Ray 26d ago
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ao3415a.step Publish 0.1.0 · Ray 26d ago
package.json Publish 0.1.0 · Ray 26d ago
page.json ao3415a: specified limits as data (metadata.characteristics, 16 rows from the datasheet) · Ray 19d ago
README.md ao3415a: specified limits as data (metadata.characteristics, 16 rows from the datasheet) · Ray 19d ago

AO3415A

UMW · MOSFETs · SOT-23

AO3415A from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the P-channel MOSFET; the device is specified for gate drive down to 1.8 V, and the absolute gate-source voltage limit is ±8 V.
2 S passive SOURCE terminal of the MOSFET; the drain-source voltage rating is -20 V (VDS).
3 D passive DRAIN terminal of the MOSFET; the continuous drain current is rated -5 A (t≤10 s) with a maximum power dissipation of 1 W (t≤10 s).

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS -20 V VGS=0V, ID=-250µA 2
Gate threshold voltage VGS(th) -0.3 -0.56 -1 V VDS=VGS, ID=-250µA 2
Zero gate voltage drain current IDSS -1 µA VDS=-16V, VGS=0V 2
Gate-body leakage current IGSS 10 µA VDS=0V, VGS=±8V 2
Gate-body leakage current IGSS 1 µA VDS=0V, VGS=±4.5V 2
Forward transconductance gFS 8 S VDS=-5V, ID=-4A 2
Drain-source on-state resistance RDS(ON) 34 36 mΩ VGS=-4.5V, ID=-4A 2
Drain-source on-state resistance RDS(ON) 43 60 mΩ VGS=-2.5V, ID=-4A 2
Body diode voltage VSD -1 V IS=-1A, VGS=0V 2
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID -5 A t≤10s 1
Maximum Power Dissipation PD 1 W t≤10s 1
Thermal Resistance from Junction to Ambient RθJA 357 °C/W 1
Operating Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1

CAD (KiCad official)

  • Symbol: AO3415A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ao3415a-etched.step / ao3415a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao3415a.step / ao3415a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (7 pp, sha256 a7b8a73b492fc7e6, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF