component
AO3415A
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
ao3415a: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ AO3415A from UMW, in a SOT-23. Pinout and pin descriptions extracted from the ma | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source breakdown voltage | V(BR)DSS | -20 | | | V | VGS=0V, ID=-250µA | 2 |+| Gate threshold voltage | VGS(th) | -0.3 | -0.56 | -1 | V | VDS=VGS, ID=-250µA | 2 |+| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS=-16V, VGS=0V | 2 |+| Gate-body leakage current | IGSS | | | 10 | µA | VDS=0V, VGS=±8V | 2 |+| Gate-body leakage current | IGSS | | | 1 | µA | VDS=0V, VGS=±4.5V | 2 |+| Forward transconductance | gFS | | 8 | | S | VDS=-5V, ID=-4A | 2 |+| Drain-source on-state resistance | RDS(ON) | | 34 | 36 | mΩ | VGS=-4.5V, ID=-4A | 2 |+| Drain-source on-state resistance | RDS(ON) | | 43 | 60 | mΩ | VGS=-2.5V, ID=-4A | 2 |+| Body diode voltage | VSD | | | -1 | V | IS=-1A, VGS=0V | 2 |+| Drain-Source Voltage | VDS | -20 | | | V | | 1 |+| Gate-Source Voltage | VGS | -8 | | 8 | V | | 1 |+| Continuous Drain Current | ID | -5 | | | A | t≤10s | 1 |+| Maximum Power Dissipation | PD | | | 1 | W | t≤10s | 1 |+| Thermal Resistance from Junction to Ambient | RθJA | | | 357 | °C/W | | 1 |+| Operating Junction Temperature | TJ | | | 150 | °C | | 1 |+| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |+ ## CAD (KiCad official) - Symbol: `AO3415A`
page.json+200−1@@ -149,6 +149,205 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "a7b8a73b492fc7e6",+ "rows": [+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=-250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.3,+ "typ": -0.56,+ "max": -1,+ "conditions": "VDS=VGS, ID=-250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-16V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS=0V, VGS=±8V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=0V, VGS=±4.5V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 8,+ "max": null,+ "conditions": "VDS=-5V, ID=-4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 34,+ "max": 36,+ "conditions": "VGS=-4.5V, ID=-4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 43,+ "max": 60,+ "conditions": "VGS=-2.5V, ID=-4A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body diode voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "IS=-1A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -8,+ "typ": null,+ "max": 8,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "t≤10s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "t≤10s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance from Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 357,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +389,4 @@ "visibility": { "public": true }-}+}