component
AO3415-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
AO3415-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
AO3415-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated at VGS ±12 V. |
| 2 | S | passive | Source terminal; continuous source-drain diode current is rated at IS = -2.1 A at TC = 25 °C. |
| 3 | D | passive | Drain terminal; drain-source voltage is rated at VDS = -20 V with continuous drain current ID = -4 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -4 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -3.2 | A | TC = 70 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | -3.5 | A | Tb,A = 25 °C (note c) | 1 | ||
| Continuous Drain Current | ID | -2.5 | A | Tb,A = 70 °C (note c) | 1 | ||
| Pulsed Drain Current | IDM | -10 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -2.1 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -1 | A | Tb,A = 25 °C (note c) | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.6 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | Tb,A = 25 °C (note c) | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | Tb,A = 70 °C (note c) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 75 | 100 | °C/W | t = 5 s, surface mounted on 1in x 1in FR4 board (notes b, c) | 1 | |
| Maximum Junction-to-Ambient, steady state | RthJA | 166 | °C/W | Steady state (note d) | 1 | ||
| Maximum Junction-to-Foot (Drain), steady state | RthJF | 40 | 50 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | -20 | V | VDS = 0 V, ID = -250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.5 | -1.5 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = -20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -10 | A | VDS = -5 V, VGS = -4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.06 | Ω | VGS = -10 V, ID = -3 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.065 | Ω | VGS = -4.5 V, ID = -2.5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.08 | Ω | VGS = -2.5 V, ID = -2 A | 2 | ||
| Gate Resistance | Rg | 0.9 | 4.4 | 8.8 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 22 | 33 | ns | VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 | 2 | |
| Rise Time | tr | 20 | 30 | ns | VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 | 2 | |
| Turn-Off Delay Time | td(off) | 28 | 42 | ns | VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 | 2 | |
| Fall Time | tf | 9 | 18 | ns | VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 | 2 | |
| Body Diode Voltage | VSD | -0.8 | -1.2 | V | IS = -3.1 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 23 | 35 | ns | IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 12 | 20 | nC | IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
AO3415-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
ao3415-vb-etched.step/ao3415-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3415-vb.step/ao3415-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
ca24f3b6b7dfe5fe, retrieved 2026-11-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).