component
AO3413A
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ao3413a: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
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20d ago
AO3413A
UMW · MOSFETs · SOT-23
AO3413A from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 20V P-channel MOSFET; the datasheet rates gate-source voltage at ±8V, and operation is specified down to 1.8V gate drive. |
| 2 | S | passive | SOURCE terminal of the MOSFET; the device is rated VDS = -20V with continuous drain current ID = -3A at VGS = -4.5V. |
| 3 | D | passive | DRAIN terminal of the MOSFET; RDS(ON) is below 66mΩ at VGS = -4.5V and below 80mΩ at VGS = -2.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | -3 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -2.4 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -15 | A | 1 | |||
| Power Dissipation | PD | 1.4 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 0.9 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±8V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.65 | -1 | V | VDS=VGS, ID=-250μA | 2 |
| On state drain current | ID(ON) | -15 | A | VGS=-4.5V, VDS=-5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 66 | mΩ | VGS=-4.5V, ID=-3A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 80 | mΩ | VGS=-2.5V, ID=-2.6A | 2 | ||
| Forward Transconductance | gFS | 12 | S | VDS=-5V, ID=-3A | 2 | ||
| Diode Forward Voltage | VSD | -0.7 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -1 | A | 2 | |||
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | 70 | 100 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 63 | 90 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead | RθJL | 80 | 125 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AO3413A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ao3413a-etched.step/ao3413a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3413a.step/ao3413a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (9 pp, sha256
019a98aeea01853e, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AO3413A
**UMW** · MOSFETs · SOT-23
AO3413A from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 20V P-channel MOSFET; the datasheet rates gate-source voltage at ±8V, and operation is specified down to 1.8V gate drive. |
| 2 | S | passive | SOURCE terminal of the MOSFET; the device is rated VDS = -20V with continuous drain current ID = -3A at VGS = -4.5V. |
| 3 | D | passive | DRAIN terminal of the MOSFET; RDS(ON) is below 66mΩ at VGS = -4.5V and below 80mΩ at VGS = -2.5V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGS | -8 | | 8 | V | | 1 |
| Continuous Drain Current | ID | | | -3 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | -2.4 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | -15 | A | | 1 |
| Power Dissipation | PD | | | 1.4 | W | TA=25°C | 1 |
| Power Dissipation | PD | | | 0.9 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | ID=-250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS=-20V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -5 | µA | TJ=55°C | 2 |
| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±8V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.65 | -1 | V | VDS=VGS, ID=-250μA | 2 |
| On state drain current | ID(ON) | -15 | | | A | VGS=-4.5V, VDS=-5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 66 | mΩ | VGS=-4.5V, ID=-3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 80 | mΩ | VGS=-2.5V, ID=-2.6A | 2 |
| Forward Transconductance | gFS | | 12 | | S | VDS=-5V, ID=-3A | 2 |
| Diode Forward Voltage | VSD | | -0.7 | -1 | V | IS=-1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | -1 | A | | 2 |
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | | 70 | 100 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | | 63 | 90 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead | RθJL | | 80 | 125 | °C/W | Steady-State | 1 |
## CAD (KiCad official)
- Symbol: `AO3413A`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ao3413a-etched.step` / `ao3413a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao3413a.step` / `ao3413a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755875720919175168) (9 pp, sha256 `019a98aeea01853e`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ao3413a-datasheet.pdf)