component
AO3409A
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| ao3409a-etched.glb | 16d ago |
| ao3409a-etched.step | 16d ago |
| ao3409a-hero.glb | 16d ago |
| ao3409a-hero.overlay.json | 16d ago |
| ao3409a.glb | 16d ago |
| ao3409a.kicad_mod | 16d ago |
| ao3409a.kicad_sym | 16d ago |
| ao3409a.lbr | 16d ago |
| ao3409a.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
AO3409A
UMW · MOSFETs · SOT-23
AO3409A from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V per the absolute maximum ratings. |
| 2 | S | passive | SOURCE terminal of the P-channel MOSFET, the reference for the gate-source voltage (VGS rated ±20 V). |
| 3 | D | passive | DRAIN terminal of the P-channel MOSFET; drain-source voltage is rated -30 V with continuous drain current of -2.6 A at TA=25°C (VGS=-10V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -2.6 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -2.2 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Power Dissipation | PD | 1.4 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 1 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance (printed value 80, junction-to-ambient or junction-to-case not assigned) | 80 | °C/W | 1 | ||||
| Thermal Resistance (printed value 125, junction-to-ambient or junction-to-case not assigned) | 125 | °C/W | 1 | ||||
| Drain-Source Breakdown Voltage | VDSS | -30 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-24V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS=-24V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.9 | -3 | V | VDS=VGS, ID=-250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 77 | 90 | mΩ | VGS=-10V, ID=-2.6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 110 | 150 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Maximum Body-Diode Continuous Current | IS | -2 | A | 2 | |||
| Diode Forward Voltage | VSD | -0.82 | -1 | V | IS=-1A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
AO3409A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ao3409a-etched.step/ao3409a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3409a.step/ao3409a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (7 pp, sha256
a19a5e1a346850a8, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).