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AO3407A-VB

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VBsemi Elec MOSFETs, SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

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docs ao3407a-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
viewers ao3407a-vb: viewers · Ray 1mo ago
ao3407a-vb-etched.fit.json ao3407a-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ao3407a-vb-etched.glb ao3407a-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ao3407a-vb-etched.step ao3407a-vb: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ao3407a-vb.glb Publish 0.1.0 · Ray 1mo ago
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page.json ao3407a-vb: specified limits as data (metadata.characteristics, 36 rows from the datasheet) · Ray 19d ago
README.md ao3407a-vb: specified limits as data (metadata.characteristics, 36 rows from the datasheet) · Ray 19d ago

AO3407A-VB

VBsemi Elec · MOSFETs · SOT-23

AO3407A-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET. VGS absolute maximum ±20 V; typical threshold VGS(th) = -0.5 to -2.0 V at ID = -250 µA. Gate resistance 7.7 Ω typ (1.5 min / 15.4 max) at 1 MHz.
2 S passive Source of the P-channel MOSFET. Continuous source-drain diode current IS = -2.1 A at TC = 25 °C; body-diode forward voltage VSD = -0.8 V typ (-1.2 V max) at IS = -4.3 A, VGS = 0 V.
3 D passive Drain of the P-channel MOSFET. VDS absolute maximum -30 V; continuous ID = -5.6 A at TC = 25 °C; RDS(on) = 46 mΩ typ at VGS = -10 V, ID = -4.4 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -2 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -2.5 A VDS = -5 V, VGS = -10 V 2
Total Gate Charge Qg 24 36 nC VDS = -15 V, VGS = -10 V, ID = -5.4 A 2
Total Gate Charge Qg 11.4 17 nC VDS = -15 V, VGS = -4.5 V, ID = -5.4 A 2
Gate Resistance Rg 1.5 7.7 15.4 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 13 20 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -10 V, Rg = 1 2
Rise Time tr 4 8 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -10 V, Rg = 1 2
Turn-Off Delay Time td(off) 38 57 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -10 V, Rg = 1 2
Fall Time tf 6 12 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -10 V, Rg = 1 2
Turn-On Delay Time td(on) 28 42 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -4.5 V, Rg = 1 2
Rise Time tr 16 24 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -4.5 V, Rg = 1 2
Turn-Off Delay Time td(off) 30 45 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -4.5 V, Rg = 1 2
Fall Time tf 10 20 ns VDD = -15 V, RL = 3.5, ID = -4.3 A, VGEN = -4.5 V, Rg = 1 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -4.3 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 15 23 ns IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 7 14 nC IF = -4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source Voltage (absolute maximum) VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -5.6 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -5.4 A TA = 25 °C 1
Continuous Drain Current ID -4.3 A TA = 70 °C 1
Pulsed Drain Current IDM -18 A t = 100 µs 1
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1 A TA = 25 °C 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W TA = 25 °C 1
Maximum Power Dissipation PD 0.8 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 75 100 °C/W t ≤ 5 s 1
Maximum Junction-to-Ambient RthJA 166 °C/W Steady state (note d) 1
Maximum Junction-to-Foot (Drain) RthJF 40 50 °C/W Steady state 1

CAD (KiCad official)

  • Symbol: AO3407A-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ao3407a-vb-etched.step / ao3407a-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao3407a-vb.step / ao3407a-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (None pp, sha256 ff11d7945f977683, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF