component
AO3407A-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+7−4@@ -32,19 +32,19 @@ "number": "1", "name": "G", "type": "input",- "description": "Gate of the P-channel MOSFET. VGS absolute maximum \u00b120 V; typical threshold VGS(th) = -0.5 to -2.0 V at ID = -250 \u00b5A. Gate resistance 7.7 \u03a9 typ (1.5 min / 15.4 max) at 1 MHz."+ "description": "Gate of the P-channel MOSFET. VGS absolute maximum ±20 V; typical threshold VGS(th) = -0.5 to -2.0 V at ID = -250 µA. Gate resistance 7.7 Ω typ (1.5 min / 15.4 max) at 1 MHz." }, { "number": "2", "name": "S", "type": "passive",- "description": "Source of the P-channel MOSFET. Continuous source-drain diode current IS = -2.1 A at TC = 25 \u00b0C; body-diode forward voltage VSD = -0.8 V typ (-1.2 V max) at IS = -4.3 A, VGS = 0 V."+ "description": "Source of the P-channel MOSFET. Continuous source-drain diode current IS = -2.1 A at TC = 25 °C; body-diode forward voltage VSD = -0.8 V typ (-1.2 V max) at IS = -4.3 A, VGS = 0 V." }, { "number": "3", "name": "D", "type": "passive",- "description": "Drain of the P-channel MOSFET. VDS absolute maximum -30 V; continuous ID = -5.6 A at TC = 25 \u00b0C; RDS(on) = 46 m\u03a9 typ at VGS = -10 V, ID = -4.4 A."+ "description": "Drain of the P-channel MOSFET. VDS absolute maximum -30 V; continuous ID = -5.6 A at TC = 25 °C; RDS(on) = 46 mΩ typ at VGS = -10 V, ID = -4.4 A." } ], "provenance": {@@ -109,5 +109,8 @@ "docs/ao3407a-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }